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STM8AF6213 数据表(PDF) 90 Page - STMicroelectronics

部件名 STM8AF6213
功能描述  Automotive 8-bit MCU, with up to 8 Kbyte Flash, data EEPROM, 10-bit ADC, timers, LIN, SPI, IC, 3 to 5.5 V
PDF  106 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM8AF6213 数据表(HTML) 90 Page - STMicroelectronics

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Electrical characteristics
STM8AF6213/23/23A/26
90/106
DocID025118 Rev 5
Electromagnetic interference (EMI)
Based on a simple application running on the product (toggling 2 LEDs through the I/O
ports), the product is monitored in terms of emission. This emission test is in line with the
norm IEC 61967-2 which specifies the board and the loading of each pin.
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, DLU and LU) using specific measurement methods,
the product is stressed to determine its performance in terms of electrical sensitivity. For
more details, refer to the application note AN1181.
Electrostatic discharge (ESD)
Electrostatic discharges (one positive then one negative pulses separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). One model
can be simulated: Human body model. This test conforms to the JESD22-A114A/A115A
standard. For more details, refer to the application note AN1181.
Table 58. EMI data
Symbol
Parameter
Conditions
Unit
General conditions
Monitored
frequency band
Max fHSE/fCPU(1)
1. Data based on characterization results, not tested in production.
16 MHz/
8 MHz
16 MHz/
16 MHz
SEMI
Peak level
VDD 5 V, 
TA 25 °C, 
LQFP32 package
conforming to
IEC 61967-2
0.1 MHz to 30 MHz
5
5
dBµV
30 MHz to 130 MHz
4
5
130 MHz to 1 GHz
5
5
EMI level
2.5
2.5
level
Table 59. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class
Maximum
value(1)
1. Data based on characterization results, not tested in production
Unit
VESD(HBM)
Electrostatic discharge voltage
(Human body model)
TA 25°C, conforming to
JESD22-A114
3A
4000
V
VESD(CDM)
Electrostatic discharge voltage
(Charge device model)
TA 25°C, conforming to
JESD22-C101
3
500
VESD(MM)
Electrostatic discharge voltage
(Machine model)
TA 25°C, conforming to
JESD22-A115
B
200



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