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STM32L475VC 数据表(PDF) 101 Page - STMicroelectronics |
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STM32L475VC 数据表(HTML) 101 Page - STMicroelectronics |
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101 / 193 page  IDD(SRAM2) (4) Supply current to be added in Standby mode when SRAM2 is retained - 1.8 V 235 641 2293 5192 11213 588 1603 5733 12980 28033 nA 2.4 V 237 645 2303 5213 11246 593 1613 5758 13033 28115 3 V 236 647 2306 5221 11333 593 1618 5765 13053 28333 3.6 V 235 646 2308 5200 11327 595 1620 5770 13075 28350 IDD(wakeup from Standby) Supply current during wakeup from Standby mode Wakeup clock is MSI = 4 MHz. See (5). 3 V 1.7 - - - - - mA 1. Guaranteed by characterization results, unless otherwise specified. 2. Guaranteed by test in production. 3. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors. 4. The supply current in Standby with SRAM2 mode is: IDD(Standby) + IDD(SRAM2). The supply current in Standby with RTC with SRAM2 mode is: IDD(Standby + RTC) + IDD(SRAM2). 5. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 41: Low-power mode wakeup timings. Table 37. Current consumption in Standby mode (continued) Symbol Parameter Conditions TYP MAX(1) Unit -VDD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C Table 38. Current consumption in Shutdown mode Symbol Parameter Conditions TYP MAX(1) Unit -VDD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C IDD(Shutdown) Supply current in Shutdown mode (backup registers retained) RTC disabled - 1.8 V 29.8 194 1110 3250 9093 75 485 2775 8125 22733 nA 2.4 V 44.3 237 1310 3798 10473 111 593 3275 9495 26183 3 V 64.1 293 1554 4461 12082 160 733 3885 11153 30205 3.6 V 112 420 2041 5689 15186 280 1050 5103 14223 37965 |
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