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STM32L475VC 数据表(PDF) 102 Page - STMicroelectronics |
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STM32L475VC 数据表(HTML) 102 Page - STMicroelectronics |
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102 / 193 page ![]() IDD(Shutdown with RTC) Supply current in Shutdown mode (backup registers retained) RTC enabled RTC clocked by LSE bypassed at 32768 Hz 1.8 V 210 378 1299 3437 9357 - - - - - nA 2.4 V 303 499 1577 4056 10825 - - - - - 3 V 422 655 1925 4820 12569 - - - - - 3.6 V 584 888 2511 6158 15706 - - - - - RTC clocked by LSE quartz (2) in low drive mode 1.8 V 329 499 1408 3460 - - - - - - 2.4 V 431 634 1688 4064 - - - - - - 3 V 554 791 2025 4795 - - - - - - 3.6 V 729 1040 2619 6129 - - - - - - IDD(wakeup from Shutdown) Supply current during wakeup from Shutdown mode Wakeup clock is MSI = 4 MHz. See (3). 3 V 0.6 - - - - - - - - - mA 1. Guaranteed by characterization results, unless otherwise specified. 2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors. 3. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 41: Low-power mode wakeup timings. Table 38. Current consumption in Shutdown mode (continued) Symbol Parameter Conditions TYP MAX(1) Unit -VDD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C |
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