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STM32L475VC 数据表(PDF) 103 Page - STMicroelectronics |
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STM32L475VC 数据表(HTML) 103 Page - STMicroelectronics |
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103 / 193 page ![]() Table 39. Current consumption in VBAT mode Symbol Parameter Conditions TYP MAX(1) Unit -VBAT 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C IDD(VBAT) Backup domain supply current RTC disabled 1.8 V 4 29 196 587 1663 10.8 73 490 1468 4158 nA 2.4 V 5.27 36 226 673 1884 13.2 90 565 1683 4710 3 V 6 42 264 775 2147 15.5 106 660 1938 5368 3.6 V 10 58 323 919 2488 25.8 144 808 2298 6220 RTC enabled and clocked by LSE bypassed at 32768 Hz 1.8 V 183 201 367 729 - - - - - - 2.4 V 268 295 486 901 - - - - - - 3 V 376 412 602 1075 - - - - - - 3.6 V 508 558 752 1299 - - - - - - RTC enabled and clocked by LSE quartz(2) 1.8 V 302 344 521 915 1978 - - - - - 2.4 V 388 436 639 1091 2289 - - - - - 3 V 494 549 784 1301 2656 - - - - - 3.6 V 630 692 971 1571 3115 - - - - - 1. Guaranteed by characterization results, unless otherwise specified. 2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors. |
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