AD8067ART-R2 datasheet(7/24 Pages) AD

7 / 24 page

AD8067

ABSOLUTE MAXIMUM RATINGS

Parameter

Rating

Supply Voltage

26.4 V

Power Dissipation

See Figure 3

Common-Mode Input Voltage

VEE – 0.5 V to VCC + 0.5 V

Differential Input Voltage

1.8 V

Storage Temperature

–65°C to +125°C

Operating Temperature Range

–40°C to +85°C

Lead Temperature Range

(Soldering 10 sec)

300°C

Junction Temperature

150°C

Stresses above those listed under Absolute Maximum Ratings may cause

permanent damage to the device. This is a stress rating only and functional

operation of the device at these or any other conditions above those

indicated in the operational section of this specification is not implied.

Exposure to absolute maximum rating conditions for extended periods may

affect device reliability.

Maximum Power Dissipation

The associated raise in junction temperature (TJ) on the die limits

the maximum safe power dissipation in the AD8067 package. At

approximately 150°C, which is the glass transition temperature, the

plastic will change its properties. Even temporarily exceeding this

temperature limit may change the stresses that the package exerts

on the die, permanently shifting the parametric performance of the

AD8067. Exceeding a junction temperature of 175°C for an

extended period of time can result in changes in the silicon devices,

potentially causing failure.

The power dissipated in the package (PD) is the sum of the

quiescent power dissipation and the power dissipated in the

package due to the load drive. The quiescent power is the voltage

between the supply pins (VS) times the quiescent current (IS).

Assuming the load (RL) is referenced to midsupply, the total drive

power is VS/2 × IOUT, some of which is dissipated in the package

and some in the load (VOUT × IOUT). The difference between the

total drive power and the load power is the drive power dissipated

in the package. RMS output voltages should be considered.

()

Power

Load

–

Power

Drive

Total

Power

Quiescent

()

OUT

–













If RL is referenced to VS– as in single-supply operation, then the

total drive power is VS × IOUT.

If the RMS signal levels are indeterminate, then consider the worst

case, when VOUT = VS/4 for RL to midsupply:

() ()

In single-supply operation with RL referenced to VS–, worst case is

VOUT

= VS/2.

Airflow will increase heat dissipation effectively, reducing θJA. In

addition, more metal directly in contact with the package leads

from metal traces, through holes, ground, and power planes will

reduce the θJA.

Figure 3 shows the maximum safe power dissipation in the pack-

age versus ambient temperature for the SOT-23-5 (180°C/W)

package on a JEDEC standard 4-layer board. θJA

values are

approximations.

It should be noted that for every 10°C rise in temperature, IB

approximately doubles (See Figure 22).

–40

2.0

1.5

0.5

AMBIENT TEMPERATURE – °C

1.0

–30 –20 –10

SOT-23-5

Figure 3. Maximum Power Dissipation vs. Temperature for a 4-Layer Board

Rev. 0 | Page 7 of 24

AD8067ART-R2 数据表(PDF) 7 Page - Analog Devices

AD8067ART-R2 数据表(HTML) 7 Page - Analog Devices

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24

数据表下载

链接网址

AD8067ART-R2 数据表(PDF) 7 Page - Analog Devices

AD8067ART-R2 数据表(HTML) 7 Page - Analog Devices

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24

数据表 下载

链接网址

数据表下载