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FT221XS-R 数据表(PDF) 20 Page - Future Technology Devices International Ltd.

部件名 FT221XS-R
功能描述  Future Technology Devices International Ltd.
PDF  45 Pages
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制造商  FTDI [Future Technology Devices International Ltd.]
网页  http://www.ftdichip.com
标志 FTDI - Future Technology Devices International Ltd.

FT221XS-R 数据表(HTML) 20 Page - Future Technology Devices International Ltd.

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Copyright © 2013 Future Technology Devices International Limited
20
FT221X USB 8-BIT SPI/FT1248 IC Datasheet
Version 1.3
Document No.: FT_000630 Clearance No.: FTDI# 263
6 Devices Characteristics and Ratings
6.1 Absolute Maximum Ratings
The absolute maximum ratings for the FT221X devices are as follows. These are in accordance with the
Absolute Maximum Rating System (IEC 60134). Exceeding these may cause permanent damage to the
device.
Parameter
Value
Unit
Conditions
Storage Temperature
-65°C to 150°C
Degrees C
Floor Life (Out of Bag) At Factory Ambient
(30°C / 60% Relative Humidity)
168 Hours
(IPC/JEDEC J-
STD-033A MSL
Level 3
Compliant)*
Hours
Ambient Operating Temperature (Power
Applied)
-40°C to 85°C
Degrees C
MTTF FT221XS
TBD
Hours
MTTF FT221XQ
TBD
Hours
VCC Supply Voltage
-0.3 to +5.5
V
VCCIO IO Voltage
-0.3 to +4.0
V
DC Input Voltage – USBDP and USBDM
-0.5 to +3.63
V
DC Input Voltage – High Impedance
Bi-directionals (powered from VCCIO)
-0.3 to +5.8
V
DC Output Current – Outputs
22
mA
Table 6.1 Absolute Maximum Ratings
* If devices are stored out of the packaging beyond this time limit the devices should be baked before
use. The devices should be ramped up to a temperature of +125°C and baked for up to 17 hours.
6.2 ESD and Latch-up Specifications
Description
Specification
Human Body Mode (HBM)
> ± 2kV
Machine mode (MM)
> ± 200V
Charged Device Mode (CDM)
> ± 500V
Latch-up
> ± 200mA
Table 6.2 ESD and Latch-Up Specifications



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