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STM32F042F4 数据表(PDF) 71 Page - STMicroelectronics

部件名 STM32F042F4
功能描述  Reset and power management
PDF  117 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F042F4 数据表(HTML) 71 Page - STMicroelectronics

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STM32F042x4 STM32F042x6
Electrical characteristics
89
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
A supply overvoltage is applied to each power supply pin.
A current injection is applied to each input, output and configurable I/O pin.
These tests are compliant with EIA/JESD 78A IC latch-up standard.
6.3.13
I/O current injection characteristics
As a general rule, current injection to the I/O pins, due to external voltage below VSS or
above VDDIOx (for standard, 3.3 V-capable I/O pins) should be avoided during normal
product operation. However, in order to give an indication of the robustness of the
microcontroller in cases when abnormal injection accidentally happens, susceptibility tests
are performed on a sample basis during device characterization.
Functional susceptibility to I/O current injection
While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into
the I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out of range parameter: ADC error above a certain limit (higher
than 5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out
of the -5 µA/+0 µA range) or other functional failure (for example reset occurrence or
oscillator frequency deviation).
The characterization results are given in Table 49.
Negative induced leakage current is caused by negative injection and positive induced
leakage current is caused by positive injection.
Table 47. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Packages
Class
Maximum
value(1)
Unit
VESD(HBM)
Electrostatic discharge voltage
(human body model)
TA = +25 °C, conforming
to JESD22-A114
All
2
2000
V
VESD(CDM)
Electrostatic discharge voltage
(charge device model)
TA = +25 °C, conforming
to ANSI/ESD STM5.3.1
All
C4
500
V
1. Data based on characterization results, not tested in production.
Table 48. Electrical sensitivities
Symbol
Parameter
Conditions
Class
LU
Static latch-up class
TA = +105 °C conforming to JESD78A
II level A



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