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STM32F042F4 数据表(PDF) 73 Page - STMicroelectronics |
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STM32F042F4 数据表(HTML) 73 Page - STMicroelectronics |
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73 / 117 page  DocID025832 Rev 5 73/117 STM32F042x4 STM32F042x6 Electrical characteristics 89 All I/Os are CMOS- and TTL-compliant (no software configuration required). Their characteristics cover more than the strict CMOS-technology or TTL parameters. The coverage of these requirements is shown in Figure 22 for standard I/Os, and in Figure 23 for 5 V-tolerant I/Os. The following curves are design simulation results, not tested in production. RPD Weak pull-down equivalent resistor(3) VIN = - VDDIOx 25 40 55 kΩ CIO I/O pin capacitance - - 5 - pF 1. Data based on design simulation only. Not tested in production. 2. The leakage could be higher than the maximum value, if negative current is injected on adjacent pins. Refer to Table 49: I/O current injection susceptibility . 3. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This PMOS/NMOS contribution to the series resistance is minimal (~10% order). Table 50. I/O static characteristics (continued) Symbol Parameter Conditions Min Typ Max Unit |
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