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STM32F042F4 数据表(PDF) 48 Page - STMicroelectronics |
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STM32F042F4 数据表(HTML) 48 Page - STMicroelectronics |
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48 / 117 page ![]() Electrical characteristics STM32F042x4 STM32F042x6 48/117 DocID025832 Rev 5 6.3.3 Embedded reset and power control block characteristics The parameters given in Table 23 are derived from tests performed under the ambient temperature and supply voltage conditions summarized in Table 21: General operating conditions . Table 22. Operating conditions at power-up / power-down Symbol Parameter Conditions Min Max Unit tVDD VDD rise time rate - 0 ∞ µs/V VDD fall time rate 20 ∞ tVDDA VDDA rise time rate - 0 ∞ VDDA fall time rate 20 ∞ Table 23. Embedded reset and power control block characteristics Symbol Parameter Conditions Min Typ Max Unit VPOR/PDR(1) 1. The PDR detector monitors VDD and also VDDA (if kept enabled in the option bytes). The POR detector monitors only VDD. Power on/power down reset threshold Falling edge(2) 2. The product behavior is guaranteed by design down to the minimum VPOR/PDR value. 1.80 1.88 1.96(3) 3. Data based on characterization results, not tested in production. V Rising edge 1.84(3) 1.92 2.00 V VPDRhyst PDR hysteresis - - 40 - mV tRSTTEMPO(4) 4. Guaranteed by design, not tested in production. Reset temporization - 1.50 2.50 4.50 ms Table 24. Programmable voltage detector characteristics Symbol Parameter Conditions Min Typ Max Unit VPVD0 PVD threshold 0 Rising edge 2.1 2.18 2.26 V Falling edge 2 2.08 2.16 V VPVD1 PVD threshold 1 Rising edge 2.19 2.28 2.37 V Falling edge 2.09 2.18 2.27 V VPVD2 PVD threshold 2 Rising edge 2.28 2.38 2.48 V Falling edge 2.18 2.28 2.38 V VPVD3 PVD threshold 3 Rising edge 2.38 2.48 2.58 V Falling edge 2.28 2.38 2.48 V VPVD4 PVD threshold 4 Rising edge 2.47 2.58 2.69 V Falling edge 2.37 2.48 2.59 V VPVD5 PVD threshold 5 Rising edge 2.57 2.68 2.79 V Falling edge 2.47 2.58 2.69 V |
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