STM32F769AI datasheet(160/255 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F765xx STM32F767xx STM32F768Ax STM32F769xx

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Prequalification trials

Most of the common failures (unexpected reset and program counter corruption) can be

reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1

second.

To complete these trials, ESD stress can be applied directly on the device, over the range of

specification values. When unexpected behavior is detected, the software can be hardened

to prevent unrecoverable errors occurring (see application note AN1015).

Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device are monitored while a simple application,

executing EEMBC code, is running. This emission test is compliant with SAE IEC61967-2

standard which specifies the test board and the pin loading.

5.3.18

Absolute maximum ratings (electrical sensitivity)

Based on three different tests (ESD, LU) using specific measurement methods, the device is

stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test

conforms to the ANSI/ESDA/JEDEC JS-001-2012 and ANSI/ESD S5.3.1-2009 standards.

Table 61. EMI characteristics

Symbol Parameter

Conditions

Monitored

frequency band

Max vs.

[fHSE/fCPU]

Unit

8/200 MHz

SEMI

Peak level

VDD = 3.6 V, TA = 25 °C, TFBGA216 package,

conforming to IEC61967-2 ART/L1-cache ON,

over-drive ON, all peripheral clocks enabled,

clock dithering disabled.

0.1 to 30 MHz

dBμV

30 to 130 MHz

130 MHz to 1 GHz

1 GHz to 2 GHz

EMI Level

3.5

VDD = 3.6 V, TA = 25 °C, TFBGA216 package,

conforming to IEC61967-2 ART/L1-cache ON,

over-drive ON, all peripheral clocks enabled,

clock dithering enabled.

0.1 to 30 MHz

dBμV

30 to 130 MHz

130 MHz to 1 GHz

1 GHz to 2 GHz

EMI Level

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