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STM32F769AI 数据表(PDF) 158 Page - STMicroelectronics |
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STM32F769AI 数据表(HTML) 158 Page - STMicroelectronics |
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158 / 255 page  Electrical characteristics STM32F765xx STM32F767xx STM32F768Ax STM32F769xx 158/255 DocID029041 Rev 4 tBE Bank erase time Program/erase parallelism (PSIZE) = x 8 -16 32 s Program/erase parallelism (PSIZE) = x 16 -11 22 Program/erase parallelism (PSIZE) = x 32 -8 16 Vprog Programming voltage 32-bit program operation 2.7 - 3 V 16-bit program operation 2.1 - 3.6 V 8-bit program operation 1.7 - 3.6 V 1. Guaranteed by characterization results. 2. The maximum programming time is measured after 100K erase operations. Table 58. Flash memory programming with VPP Symbol Parameter Conditions Min(1) Typ Max(1) 1. Guaranteed by design. Unit tprog Double word programming TA = 0 to +40 °C VDD = 3.3 V VPP = 8.5 V - 16 100(2) 2. The maximum programming time is measured after 100K erase operations. μs tERASE32KB Sector (32 KB) erase time - 180 - ms tERASE128KB Sector (128 KB) erase time - 450 - tERASE256KB Sector (256 KB) erase time - 900 - tME Mass erase time - 6.9 - s Vprog Programming voltage - 2.7 - 3.6 V VPP VPP voltage range - 7 - 9 V IPP Minimum current sunk on the VPP pin -10 - - mA tVPP(3) 3. VPP should only be connected during programming/erasing. Cumulative time during which VPP is applied - - - 1 hour Table 59. Flash memory endurance and data retention Symbol Parameter Conditions Value Unit Min(1) NEND Endurance TA = –40 to +85 °C (6 suffix versions) TA = –40 to +105 °C (7 suffix versions) 10 kcycles tRET Data retention 1 kcycle(2) at TA = 85 °C 30 Years 1 kcycle(2) at TA = 105 °C 10 10 kcycles(2) at TA = 55 °C 20 Table 57. Flash memory programming (dual bank configuration nDBANK=0) (continued) Symbol Parameter Conditions Min(1) Typ Max(1) Unit |
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