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STM32F769AI 数据表(PDF) 157 Page - STMicroelectronics

部件名 STM32F769AI
功能描述  Dual mode Quad-SPI
PDF  255 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F769AI 数据表(HTML) 157 Page - STMicroelectronics

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STM32F765xx STM32F767xx STM32F768Ax STM32F769xx
Electrical characteristics
224
Vprog
Programming voltage
32-bit program operation
2.7
-
3
V
16-bit program operation
2.1
-
3.6
V
8-bit program operation
1.7
-
3.6
V
1. Guaranteed by characterization results.
2. The maximum programming time is measured after 100K erase operations.
Table 57. Flash memory programming (dual bank configuration
nDBANK=0)
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1) Unit
tprog
Word programming time
Program/erase parallelism
(PSIZE) = x 8/16/32
-
16
100(2)
μs
tERASE16KB Sector (16 KB) erase time
Program/erase
parallelism (PSIZE) = x 8
-
400
800
ms
Program/erase
parallelism (PSIZE) = x 16
-
250
600
Program/erase
parallelism (PSIZE) = x 32
-
200
500
tERASE64KB Sector (64 KB) erase time
Program/erase
parallelism (PSIZE) = x 8
-
1100
2400
ms
Program/erase
parallelism (PSIZE) = x 16
-
800
1400
Program/erase
parallelism (PSIZE) = x 32
-
500
1100
tERASE128KB Sector (128 KB) erase time
Program/erase
parallelism (PSIZE) = x 8
-
2.1
4
s
Program/erase
parallelism (PSIZE) = x 16
-
1.5
2.6
Program/erase
parallelism (PSIZE) = x 32
-1
2
tME
Mass erase time
Program/erase
parallelism (PSIZE) = x 8
-16
32
s
Program/erase
parallelism (PSIZE) = x 16
-11
22
Program/erase
parallelism (PSIZE) = x 32
-8
16
Table 56. Flash memory programming (single bank configuration
nDBANK=1) (continued)
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1) Unit



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