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NM1282KSLAXAL 数据表(PDF) 103 Page - Nanya Technology Corporation. |
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NM1282KSLAXAL 数据表(HTML) 103 Page - Nanya Technology Corporation. |
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103 / 120 page  Version 1.3 103 Nanya Technology Corp. 06/2018 All Rights Reserved. © 2Gb SLC NAND + 2Gb LPDDR2 NM1282KSLAXAL NTC Proprietary Level: Property MR1_Device Feature 1 (MA<7:0> = 01H) MR# MA <7:0> Function Access OP7 OP6 OP5 OP4 OP3 OP2 OP1 OP0 1 01H Device Feature1 W nWR (for AP) WC BT BL OP<2:0> BL (Burst Length) Write-only 010B: BL4 (default) 011B: BL8 100B: BL16 All others: reserved OP3 BT1 (Burst Type) Write-only 0B: Sequential (default) 1B: Interleaved OP4 WC (Wrap) Write-only 0B: Wrap (default) 1B: No wrap (allowed for SDRAM BL4 only) OP<7:5> nWR2 (for AP) Write-only 001B: nWR=3 (default) 010B: nWR =4 011B: nWR =5 100B: nWR =6 101B: nWR =7 110B: nWR =8 All others: reserved Notes: 1. BL16, interleaved is not an official combination to be supported. 2. Programmed value in nWR register is the number of clock cycles which determines when to start internal precharge operation for a write burst with AP enabled. It is determined by RU(tWR/tCK). |
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