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PCF8564A 数据表(PDF) 38 Page - NXP Semiconductors

部件名 PCF8564A
功能描述  Tiny Real-Time Clock/calendar with alarm function and I2C-bus
PDF  65 Pages
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors

PCF8564A 数据表(HTML) 38 Page - NXP Semiconductors

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PCF85063A
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2018. All rights reserved.
Product data sheet
Rev. 7 — 30 March 2018
38 of 65
NXP Semiconductors
PCF85063A
Tiny Real-Time Clock/calendar with alarm function and I2C-bus
12. Limiting values
[1]
Remark: The PCF85063A part is not guaranteed (nor characterized) above the operating range as denoted
in the datasheet. NXP recommends not to bias the PCF85063A device during reflow (e.g. if utilizing a 'coin'
type battery in the assembly). If customer so chooses to continue to use this assembly method, there must
be the allowance for a full `0 V' level Power supply `reset' to re-enable the device. Without a proper POR,
the device may remain in an indeterminate state.
[2]
Pass level; Human Body Model (HBM) according to Ref. 7 “JESD22-A114”.
[3]
Pass level; Charged-Device Model (CDM), according to Ref. 8 “JESD22-C101”.
[4]
Pass level; latch-up testing, according to Ref. 9 “JESD78” at maximum ambient temperature (Tamb(max)).
[5]
According to the store and transport requirements (see Ref. 18 “UM10569”) the devices have to be stored
at a temperature of +8
C to +45 C and a humidity of 25 % to 75 %.
Table 40.
Limiting values[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDD
supply voltage
0.5
+6.5
V
IDD
supply current
50
+50
mA
VI
input voltage
on pins SCL, SDA, OSCI,
CLKOE
0.5
+6.5
V
VO
output voltage
0.5
+6.5
V
II
input current
at any input
10
+10
mA
IO
output current
at any output
10
+10
mA
Ptot
total power dissipation
-
300
mW
VESD
electrostatic discharge
voltage
HBM
[2] -
5000
V
CDM
[3]
PCF85063ATL
-
1750
V
PCF85063AT
-
2000
V
PCF85063ATT
-
2000
V
Ilu
latch-up current
[4] -200
mA
Tstg
storage temperature
[5]
65
+150
C
Tamb
ambient temperature
operating device
40
+85
C



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