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STM32F373VC 数据表(PDF) 79 Page - STMicroelectronics |
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STM32F373VC 数据表(HTML) 79 Page - STMicroelectronics |
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79 / 137 page  DocID022691 Rev 7 79/137 STM32F373xx Electrical characteristics 114 6.3.10 Memory characteristics Flash memory The characteristics are given at TA = –40 to 105 °C unless otherwise specified. Table 45. Flash memory characteristics Symbol Parameter Conditions Min Typ Max(1) 1. Guaranteed by design. Unit tprog 16-bit programming time TA = –40 to +105 °C 40 53.5 60 µs tERASE Page (2 kB) erase time TA = –40 to +105 °C 20 - 40 ms tME Mass erase time TA = –40 to +105 °C 20 - 40 ms IDD Supply current Write mode - - 10 mA Erase mode - - 12 mA Table 46. Flash memory endurance and data retention Symbol Parameter Conditions Value Unit Min(1) 1. Guaranteed by characterization results. NEND Endurance TA = –40 to +85 °C (6 suffix versions) TA = –40 to +105 °C (7 suffix versions) 10 kcycles tRET Data retention 1 kcycle(2) at TA = 85 °C 2. Cycling performed over the whole temperature range. 30 Years 1 kcycle(2) at TA = 105 °C 10 10 kcycles(2) at TA = 55 °C 20 |
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