1.

DDR2-SDRAM Features

• Part Numbers:

– 1-Gbit DDR2-SDRAM device (SAM9X60D1G-I): Winbond W971G16SG2-5I

– 512-Mbit DDR2-SDRAM device (SAM9X60D5M-I): Winbond W975116KG2-5I

• Power Supply: DDRM_VDD = 1.8V ±0.1V

• Double Data Rate Architecture: Two Data Transfers per Clock Cycle

• CAS Latency: 3

• Burst Length: 8

• Bi-Directional, Differential Data Strobes (DQS and DQSN) are Transmitted/Received with Data

• Edge-Aligned with Read Data and Center-Aligned with Write Data

• DLL Aligns DQ and DQS Transitions with Clock

• Differential Clock Inputs (CLK and CLKN)

• Data Masks (DM) for Write Data

• Commands Entered on Each Positive CLK Edge, Data and Data Mask are Referenced to Both Edges of DQS

• Auto-Refresh and Self-Refresh Modes

• Precharged Power-Down and Active Power-Down

• Write Data Mask

• Write Latency = Read Latency - 1 (WL = RL - 1)

• Interface: SSTL_18

SAM9X60 SIP

DDR2-SDRAM Features

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and its subsidiaries

Datasheet

DS60001580C-page 6