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STA323W 数据表(PDF) 14 Page - STMicroelectronics

部件名 STA323W
功能描述  2.1 high efficiency digital audio system
PDF  71 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STA323W 数据表(HTML) 14 Page - STMicroelectronics

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Electrical characteristics
STA323W
14/71
3
Electrical characteristics
Note:
VDD3 = 3.3V ± 0.3V; Tamb = 25°C; unless otherwise specified.
Note:
1
The leakage currents are generally very small < 1na. The values given here are maximum
after an electrostatic stress on the pin.
2
Human body model.
Table 8.
General interface electrical characteristics
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Note
Iil
Low level input no pull-up
Vi = 0V
1
µA1
Iih
High level input no
pull-down
Vi = VDD3
2
µA1
IOZ
Tristate output leakage
without pull-up/down
Vi = VDD3
2
µA1
Vesd
Electrostatic protection
Leakage < 1
µA
2000
V
2
Table 9.
DC electrical characteristics: 3.3 V buffers
Symbol
Parameter
Test condition
Min.
Typ.
Max.
Unit
VIL
Low level Input voltage
0.8
V
VIH
High level Input voltage
2.0
V
Vhyst
Schmitt trigger hysteresis
0.4
V
Vol
Low level output
IoI = 2mA
0.15
V
Voh
High level output
Ioh = -2mA
VDD -0.15
V
Table 10.
Power electrical characteristics (VL = 3.3 V; Vcc = 30 V; Tamb = 25 °C
unless otherwise specified)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
RdsON
Power Pchannel/Nchannel
MOSFET RdsON
Id=1 A
200
270
m
Ω
Idss
Power Pchannel/Nchannel
leakage Idss
Vcc=35 V
50
µA
gN
Power Pchannel RdsON
matching
Id=1 A
95
%
gP
Power Nchannel RdsON
matching
Id=1 A
95
%
Dt_s
Low current dead time
(static)
See test circuit no.1; see
Figure 12
10
20
ns
td ON
Turn-on delay time
Resistive load
100
ns
td OFF
Turn-off delay time
Resistive load
100
ns
tr
Rise time
Resistive load
25
ns
tf
Fall time
Resistive load; as Figure 12
25
ns



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