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BS640HD9V 数据表(PDF) 60 Page - Advanced Micro Devices

部件名 BS640HD9V
功能描述  128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
PDF  89 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

BS640HD9V 数据表(HTML) 60 Page - Advanced Micro Devices

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58
Am29BDS128H/Am29BDS640H
27024B3 May 10, 2006
D A TA
SH EE T
AC CHARACTERISTICS
Notes:
1. Figure shows total number of wait states set to seven cycles. The total number of wait states can be programmed from two
cycles to seven cycles.
2. If any burst address occurs at a 64-word boundary, two additional clock cycle are inserted, and is indicated by RDY.
3. The device is in synchronous mode.
Figure 16.
CLK Synchronous Burst Mode Read (rising active CLK)
Notes:
1. Figure shows total number of wait states set to four cycles. The total number of wait states can be programmed from two
cycles to seven cycles. Clock is set for active falling edge.
2. If any burst address occurs at a 64-word boundary, two additional clock cycle are inserted, and is indicated by RDY.
3. The device is in synchronous mode.
Figure 17.
CLK Synchronous Burst Mode Read (Falling Active Clock)
Da
Da + 1
Da + n
OE#
Data
Addresses
Aa
AVD#
RDY
CLK
CE#f
tCES
tACS
tAVC
tAVD
tACH
tOE
tRACC
tOEZ
tCEZ
tIACC
tACC
tBDH
7 cycles for initial access shown.
Hi-Z
Hi-Z
Hi-Z
1
2
34
56
7
tRDYS
tBACC
tCR
Da
Da + 1
Da + n
OE#
Data
Addresses
Aa
AVD#
RDY
CLK
CE#
tCES
tACS
tAVC
tAVD
tACH
tOE
tOEZ
tCEZ
tIACC
tACC
tBDH
4 cycles for initial access shown.
tRACC
Hi-Z
Hi-Z
Hi-Z
12
3
4
5
tRDYS
tBACC
tCR



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