BS640HD9V datasheet(78/89 Pages) AMD

部件名	BS640HD9V

功能描述	128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory

PDF	89 Pages

Scroll/Zoom	100%

制造商	AMD [Advanced Micro Devices]

网页	http://www.amd.com

标志

78 / 89 page

Am29BDS128H/Am29BDS640H

27024B3 May 10, 2006

D A TA

SH EE T

AC CHARACTERISTICS

Notes:

1. Status reads in figure are shown as asynchronous.

2. VA = Valid Address. Two read cycles are required to determine status. When the Embedded Algorithm operation is complete,

and Data# Polling will output true data.

3. While in Asynchronous mode, RDY will be low while the device is in embedded erase or programming mode.

Figure 40.

Data# Polling Timings (During Embedded Algorithm)

Notes:

1. Status reads in figure are shown as asynchronous.

2. VA = Valid Address. Two read cycles are required to determine status. When the Embedded Algorithm operation is complete,

the toggle bits will stop toggling.

3. While in Asynchronous mode, RDY will be low while the device is in embedded erase or programming mode.

Figure 41.

Toggle Bit Timings (During Embedded Algorithm)

WE#

CE#

OE#

tOE

Addresses

AVD#

tOEH

tCE

tCH

tOEZ

tCEZ

Status Data

tACC

Data

WE#

CE#

OE#

tOE

Addresses

AVD#

tOEH

tCE

tCH

tOEZ

tCEZ

Status Data

tACC

Data

BS640HD9V 数据表(PDF) 78 Page - Advanced Micro Devices

BS640HD9V 数据表(HTML) 78 Page - Advanced Micro Devices

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