BS640HD9V datasheet(12/89 Pages) AMD

12 / 89 page

Am29BDS128H/Am29BDS640H

27024B3 May 10, 2006

D A TA

SH EE T

ORDERING INFORMATION

The order number (Valid Combination) is formed by the following:

Valid Combinations

Valid Combinations list configurations planned to be supported in vol-

ume for this device. Consult the local AMD sales office to confirm avail-

ability of specific valid combinations and to check on newly released

combinations.

Am29BDS

128

TEMPERATURE RANGE

Industrial (–40

°C to +85°C)

PACKAGE TYPE

VK =

80-Ball Fine-Pitch Ball Grid Array (BGA)

0.80 mm pitch, 11.5 x 9 mm package (VBB080)

VF =

80-Ball Fine-Pitch Ball Grid Array (BGA)

0.80 mm pitch, 11.5 x 9mm, Pb-free Package (VBB080)

VM =

64-Ball Fine-Pitch Ball Grid Array (BGA)

0.80 mm pitch, 8 X 9 mm package (VBD064)

VIO AND HANDSHAKING OPTIONS

VIO = 1.8 V, reduced wait-state handshaking enabled

VIO = 1.8 V, standard handshaking

SPEED

66 MHz

54 MHz

PROCESS TECHNOLOGY

0.13 µm

DENSITY

128 =

128 Mbit (8 M x 16-bit)

64 =

64 Mbit (4 M x 16-bit)

DEVICE FAMILY

Am29BDS

CMOS Flash Memory, Simultaneous Read/Write,

Burst Mode Flash Memory, 1.8 Volt-only Read, Program, and Erase

Valid Combinations

Burst Frequency

(MHz)

Density

Order Number

Package Marking

Am29BDS128HE8

VKI

BS128HE8V

128 Mbit

Am29BDS128HE9

BS128HE9V

Am29BDS128HD8

BS128HD8V

Am29BDS128HD9

BS128HD9V

Am29BDS128HE8

VFI

BS128HE8VF

Am29BDS128HE9

BS128HE9VF

Am29BDS128HD8

BS128HD8VF

Am29BDS128HD9

BS128HD9VF

Am29BDS640HE8

VMI

BS640HE8V

64 Mbit

Am29BDS640HE9

BS640HE9V

Am29BDS640HD8

BS640HD8V

Am29BDS640HD9

BS640HD9V

BS640HD9V 数据表(PDF) 12 Page - Advanced Micro Devices

BS640HD9V 数据表(HTML) 12 Page - Advanced Micro Devices

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