BS640HD9V datasheet(84/89 Pages) AMD

部件名	BS640HD9V

功能描述	128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory

PDF	89 Pages

Scroll/Zoom	100%

制造商	AMD [Advanced Micro Devices]

网页	http://www.amd.com

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84 / 89 page

Am29BDS128H/Am29BDS640H

27024B3 May 10, 2006

D A TA

SH EE T

AC CHARACTERISTICS

Wait State Decoding Addresses:

A14, A13, A12 = “111”

⇒ Reserved

A14, A13, A12 = “110”

⇒ Reserved

A14, A13, A12 = “101”

⇒ 5 programmed, 7 total

A14, A13, A12 = “100”

⇒ 4 programmed, 6 total

A14, A13, A12 = “011”

⇒ 3 programmed, 5 total

A14, A13, A12 = “010”

⇒ 2 programmed, 4 total

A14, A13, A12 = “001”

⇒ 1 programmed, 3 total

A14, A13, A12 = “000”

⇒ 0 programmed, 2 total

Note: Figure assumes address D0 is not at an address boundary, active clock edge is rising, and wait state is set to “101”.

Figure 48.

Example of Wait States Insertion

Data

AVD#

OE#

CLK

total number of clock cycles

following AVD# falling edge

Rising edge of next clock cycle

following last wait state triggers

next burst data

number of clock cycles

programmed

BS640HD9V 数据表(PDF) 84 Page - Advanced Micro Devices

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