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ST10F272M 数据表(PDF) 130 Page - STMicroelectronics

部件名 ST10F272M
功能描述  16-bit MCU with 256 Kbyte Flash memory and 20 Kbyte RAM
PDF  175 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

ST10F272M 数据表(HTML) 130 Page - STMicroelectronics

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Electrical characteristics
ST10F272M
130/176
24.6
Flash characteristics
VDD = 5V ± 10%, VSS = 0V
Table 57.
Flash characteristics
Parameter
Typical
Maximum
Unit
Notes
TA = 25°C
TA = 125°C
0 cycles(1)
0 cycles(1)
100k cycles
Word Program (32-bit) (2)
35
80
290
µs
Double Word Program (64-bit)(2)
60
150
570
µs
Bank 0 Program (256 Kbyte)
(Double Word Program)
1.6
2.0
3.9
s
Sector Erase (8 Kbyte)
0.6
0.5
0.9
0.8
1.0
0.9
s
not preprogrammed
preprogrammed
Sector Erase (32 Kbyte)
1.1
0.8
2.0
1.8
2.7
2.5
s
not preprogrammed
preprogrammed
Sector Erase (64 Kbyte)
1.7
1.3
3.7
3.3
5.1
4.7
s
not preprogrammed
preprogrammed
Bank 0 Erase (256 Kbyte)(3)
5.6
4.0
13.6
11.9
19.2
17.5
s
not preprogrammed
preprogrammed
Recovery from Power-Down (tPD)
40
40
µs
(4)
Program Suspend Latency(4)
–10
10
µs
Erase Suspend Latency(4)
–30
30
µs
Erase Suspend Request Rate(4)
20
20
20
ms
Minimum delay between
two requests
Set Protection(4)
40
90
300
µs
1.
The figures are given after about 100 cycles due to testing routines (0 cycles at the final customer).
2.
Word and Double Word Programming times are provided as average values derived from a full sector programming time:
absolute value of a Word or Double Word Programming time could be longer than the average value.
3.
Bank Erase is obtained through a multiple Sector Erase operation (setting bits related to all sectors of the Bank). As
ST10F272M implements only one bank, the Bank Erase operation is equivalent to Module and Chip Erase operations.
4.
Not 100% tested, guaranteed by Design Characterization.



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