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ST10F272M 数据表(PDF) 131 Page - STMicroelectronics |
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ST10F272M 数据表(HTML) 131 Page - STMicroelectronics |
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131 / 175 page  ST10F272M Electrical characteristics 131/176 24.7 A/D converter characteristics VDD = 5V ± 10%, VSS = 0V, TA = -40 to +125°C, 4.5V ≤ VAREF ≤ VDD, VSS ≤ VAGND ≤ VSS + 0.2V Table 58. Flash data retention characteristics Number of program / erase cycles (-40°C < TA < 125°C) Data retention time (average ambient temperature 60°C) 256 Kbyte (code store) 64 Kbyte (EEPROM emulation)(1) 0 - 100 > 20 years > 20 years 1000 - > 20 years 10000 - 10 years 100000 - 1 year 1. Two 64 Kbyte Flash Sectors may be typically used to emulate up to 4, 8 or 16 Kbytes of EEPROM. Therefore, in case of an emulation of a 16 Kbyte EEPROM, 100,000 Flash Program / Erase cycles are equivalent to 800,000 EEPROM Program/Erase cycles. For an efficient use of the EEPROM Emulation please refer to dedicated Application Note document (AN2061 - “EEPROM Emulation with ST10F2xx”). Contact your local field service, local sales person or STMicroelectronics representative to obtain a copy of such a guideline document. Table 59. A/D converter characteristics Parameter Symbol Limit values Unit Test condition Min Max Analog Reference voltage(1) VAREF SR 4.5 VDD V Analog Ground voltage VAGND SR VSS VSS + 0.2 V Analog Input voltage(2) VAIN SR VAGND VAREF V Reference supply current IAREF CC – – 5 1 mA µA Running mode(3) Power-down mode Sample time tS CC 1– µs (4) Conversion time tC CC 3– µs (5) Differential Non Linearity(6) DNL CC -1 +1 LSB No overload Integral Non Linearity(6) INL CC -1.5 +1.5 LSB No overload Offset Error(6) OFS CC -1.5 +1.5 LSB No overload Total unadjusted error(6) TUE CC -2.0 -5.0 -7.0 +2.0 +5.0 +7.0 LSB Port5 Port1 - No overload(3) Port1 - Overload(3) Coupling Factor between inputs(3)(7) K CC –10–6 – On both Port5 and Port1 Input Pin Capacitance(3)(8) CP1 CC –3 pF CP2 CC – 4 6 pF Port5 Port1 Sampling Capacitance(3)(8) CS CC –3.5 pF |
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