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68HC05PL4 数据表(PDF) 93 Page - Freescale Semiconductor, Inc |
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68HC05PL4 数据表(HTML) 93 Page - Freescale Semiconductor, Inc |
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93 / 98 page ![]() April 30, 1998 GENERAL RELEASE SPECIFICATION MC68HC05PL4 REV 2.0 A-3 PGM – EPROM ProGraM command 0 = Programming power is switched OFF from EPROM array. 1 = Programming power is switched ON to EPROM array. If ELAT ≠ 1, then PGM = 0. A.4.2 Programming Sequence The EPROM programming sequence is: 1. Set the ELAT bit 2. Write the data to the address to be programmed 3. Set the PGM bit 4. Delay for a time tPGMR 5. Clear the PGM bit 6. Clear the ELAT bit The last two steps must be performed with separate CPU writes. CAUTION It is important to remember that an external programming voltage must be applied to the VPP pin while programming, but it should be equal to VDD during normal operations. Figure A-2 shows the o w required to successfully program the EPROM. A.5 EPROM PROGRAMMING SPECIFICATIONS Table A-2. EPROM Programming Electrical Characteristics (VDD = 4V ±10%, VSS = 0 Vdc, TA = 0°C to +70°C, unless otherwise noted) Characteristic Symbol Min Typ Max Unit Programming Voltage VPP — 12.5 — V Programming Current IPP — 5 10 mA Programming Time per byte tEPGM —1— ms Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com |
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