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L6918 数据表(PDF) 14 Page - STMicroelectronics |
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L6918 数据表(HTML) 14 Page - STMicroelectronics |
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14 / 35 page ![]() L6918 L6918A 14/35 Figure 4. Drivers peak current: High Side (left) and Low Side (right) CURRENT READING AND OVER CURRENT Each device involved in the four phase conversion has its own current reading circuitry and over current protec- tion. As a results, the OCP network design for each device must be performed fort half of the maximum output current. The current flowing trough each phase is read using the voltage drop across the low side mosfets RDSON or across a sense resistor (RSENSE) and internally converted into a current. The transconductance ratio is issued by the external resistor Rg placed outside the chip between ISENx and PGNDSx pins toward the reading points. The full differential current reading rejects noise and allows to place sensing element in different locations with- out affecting the measurement's accuracy. The current reading circuitry reads the current during the time in which the low-side mosfet is on (OFF Time). During this time, the reaction keeps the pin ISENx and PGNDSx at the same voltage while during the time in which the reading circuitry is off, an internal clamp keeps these two pins at the same voltage sinking from the ISENx pin the necessary current (Needed if low-side mosfet RdsON sense is implemented to avoid absolute maximum rating overcome on ISENx pin). The proprietary current reading circuit allows a very precise and high bandwidth reading for both positive and negative current. This circuit reproduces the current flowing through the sensing element using a high speed Track & Hold Tran conductance amplifier. In particular, it reads the current during the second half of the OFF time reducing noise injection into the device due to the high side mosfet turn-on (See fig. 5). Track time must be at least 200ns to make proper reading of the delivered current. This circuit sources a constant 50 µA current from the PGNDSx pin and keeps the pins ISENx and PGNDSx at the same voltage. Referring to figure 5, the current that flows in the ISENx pin is then given by the following equation: Where RSENSE is an external sense resistor or the RdsON of the low side mosfet and Rg is the transconductance resistor used between ISENx and PGNDSx pins toward the reading points; IPHASE is the current carried by each phase. The current information reproduced internally is represented by the second term of the previous equation as follow: CH3 = HGATE1; CH4 = HGATE2 CH3 = LGATE1; CH4 = LGATE2 I I SEN x 50 µA R SEN SE I P H ASE ⋅ R g --------------------------------------------- 50 µAI IN F Ox + = + = |
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