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L6918 数据表(PDF) 26 Page - STMicroelectronics |
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L6918 数据表(HTML) 26 Page - STMicroelectronics |
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26 / 35 page ![]() L6918 L6918A 26/35 Figure 17. Device orientation (left) and sense nets routing (right). Gate resistors of few ohms help in reducing the power dissipated by the IC without compromising the system efficiency. The placement of other components is also important: – The bootstrap capacitor must be placed as close as possible to the BOOTx and PHASEx pins to min- imize the loop that is created. – Decoupling capacitor from Vcc and SGND placed as close as possible to the involved pins. – Decoupling capacitor from VCCDR and PGND placed as close as possible to those pins. This capac- itor sustains the peak currents requested by the low-side mosfet drivers. – Refer to SGND all the sensible components such as frequency set-up resistor (when present) and also the optional resistor from FB to GND used to give the positive droop effect. – Connect SGND to PGND on the load side (output capacitor) to avoid undesirable load regulation ef- fect and to ensure the right precision to the regulation when the remote sense buffer is not used. – An additional 100nF ceramic capacitor is suggested to place near HS mosfet drain. This helps in re- ducing noise. – PHASE pin spikes. Since the HS mosfet switches in hard mode, heavy voltage spikes can be ob- served on the PHASE pins. If these voltage spikes overcome the max breakdown voltage of the pin, the device can absorb energy and it can cause damages. The voltage spikes must be limited by prop- er layout, the use of gate resistors, Schottky diodes in parallel to the low side mosfets and/or snubber network on the low side mosfets, to a value lower than 26V, for 20nSec, at Fosc of 600kHz max. Current Sense Connectio ns. – Remote Buffer: The input connections for this component must be routed as parallel nets from the FBG/FBR pins to the load in order to compensate losses along the output power traces and also to avoid the pick-up of any common mode noise. Connecting these pins in points far from the load will cause a non-optimum load regulation, increasing output tolerance. – Current Reading: The Rg resistor has to be placed as close as possible to the ISENx and PGNDSx pins in order to limit the noise injection into the device. The PCB traces connecting these resistors to the reading point must be routed as parallel traces in order to avoid the pick-up of any common mode noise. It's also important to avoid any offset in the measurement and to get a better precision, to con- nect the traces as close as possible to the sensing elements, dedicated current sense resistor or low side mosfet RdsON. – Moreover, when using the low side mosfet RdsON as current sense element, the ISENx pin is practi- cally connected to the PHASEx pin. DO NOT CONNECT THE PINS TOGETHER AND THEN TO THE HS SOURCE! The device won't work properly because of the noise generated by the return of the high side driver. In this case route two separate nets: connect the PHASEx pin to the HS Source (route together with HGATEx) with a wide net (30 mils) and the ISENx pin to the LS Drain (route to- gether with PGNDSx). Moreover, the PGNDSx pin is always connected, through the Rg resistor, to the PGND: DO NOT CONNECT DIRECTLY TO THE PGND! In this case the device won't work prop- erly. Route anyway to the LS mosfet source (together with ISENx net). Right and wrong connections are reported in Figure 18. Symmetrical layout is also suggested to avoid any unbalance between the two phases of the converter Towards HS mosfet (30 mils wide) Towards LS mosfet (30 mils wide) Towards HS mosfet (30 mils wide) To LS mosfet (or sense resistor) To regulated output To LS mosfet (or sense resistor) |
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