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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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SERCON410B 数据表(PDF) 18 Page - STMicroelectronics |
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SERCON410B 数据表(HTML) 18 Page - STMicroelectronics |
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18 / 34 page  Figure 10. Read Access of Dual Port RAM AC ELECTRICAL CHARACTERISTICS (Continued) 3.4.6 Read Access of Dual Port RAM Symbol Parameter Value Unit Min. Type Max. tASU Setup time A10-0, BHEN, MCSN0-1, WRN (only Motorola mode) to falling edge RDN (Intel or Motorola mode with low active strobe) or rising edge RDN (Motorola mode with high active strobe) 0ns tAHD Hold time A10-0, BHEN, MCSN0-1, WRN (only Motorola mode) to rising edge RDN (Intel Motorola mode with low active strobe) or falling edge RDN (Motorola mode with high active strobe) 0ns tMRDD Access time RDN to D15-0 valid 60 ns tMBSY Delay RDN to BUSYN low 35 ns tMBHD Delay BUSYN high to D15-0 valid 30 ns tRDZ Delay RDN to D15-0 high-Z 15 ns tRD1 RDN and WRN high after end of read access 30 ns ® SERCON410B 14/30 |
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