SERCON410B datasheet(20/34 Pages) STMICROELECTRONICS

20 / 34 page

Figure 12. Write Access to DUAL Port RAM

AC ELECTRICAL CHARACTERISTICS (Continued)

Symbol

Parameter

Value

Unit

Min.

Type

Max.

tASU

Setup time A10-0, BHEN, MCSN0-1, WRN

(only Motorola mode) to falling edge of

WRN (Intel mode) or RDN (Motorola mode

with low active strobe) or rising edge RDN

(Motorola mode with high active strobe)

0ns

tAHD

Hold time A10-0, BHEN, MCSN0-1, WRN

(only Motorola mode) to rising edge of WRN

(Intel mode) or RDN (Motorola mode with low

active strobe) or rising edge RDN (Motorola

mode with high active strobe)

0ns

tMWRW

Pulse width WRN or RDN

tDSU

Setup time D15-0 to end of write access

tDHD

Hold time D15-0 after end of write access

tMBSY

Delay WRN or RDN (begin of write access)

to BUSYN low

tMBHWH

Setup time BUSYN high to end of write

access

tWR1

WRN and RDN high after end of write

access

3.4.8 Write Access to Dual Port RAM

SERCON410B

16/30

SERCON410B 数据表(PDF) 20 Page - STMicroelectronics

SERCON410B 数据表(HTML) 20 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34

数据表下载