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T80C5112-RKFCL 数据表(PDF) 77 Page - ATMEL Corporation |
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T80C5112-RKFCL 数据表(HTML) 77 Page - ATMEL Corporation |
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77 / 97 page ![]() Rev. B - November 10, 2000 77 Preliminary T80C5112 Figure 34. Programming and Verification Signal’s Waveform 17.4. EPROM Erasure (Windowed Packages Only) Erasing the EPROM erases the code array, the encryption array and the lock bits returning the parts to full functionality. Erasure leaves all the EPROM cells in a 1Õs state (FF). 17.4.1. Erasure Characteristics The recommended erasure procedure is exposure to ultraviolet light (at 2537 ) to an integrated dose at least 15 W-sec/cm2. Exposing the EPROM to an ultraviolet lamp of 12,000 m W/cm2 rating for 30 minutes, at a distance of about 25 mm, should be sufficient. An exposure of 1 hour is recommended with most of standard erasers. Erasure of the EPROM begins to occur when the chip is exposed to light with wavelength shorter than approximately 4,000 . Since sunlight and fluorescent lighting have wavelengths in this range, exposure to these light sources over an extended time (about 1 week in sunlight, or 3 years in room-level fluorescent lighting) could cause inadvertent erasure. If an application subjects the device to this type of exposure, it is suggested that an opaque label be placed over the window. 17.5. Signature Bytes 17.5.1. Signature bytes content The T80C5112 has four signature bytes in location 30h, 31h, 60h and 61h. To read these bytes follow the procedure for EPROM verify but activate the control lines provided in xxxx for Read Signature Bytes. Table 51. shows the content of the signature byte for the T80C5112. Table 51. Signature Bytes Content Location Contents Comment 30h 58h Manufacturer Code: Atmel Wireless & Microcontrollers 31h 57h Family Code: C51 X2 60h 2Dh Product name: T80C5112 8K ROM version 60h ADh Product name: T80C5112 8K OTP version 61h EFh Product revision number : T80C5112 Rev.0 Control signals Data In ALE/PROG A0-A12 Programming Cycle 100 m s D0-D7 RST/VPP Data Out Read/Verify Cycle 12.75V 5V 0V |
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