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STM8AP5X2ATAY 数据表(PDF) 61 Page - STMicroelectronics |
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STM8AP5X2ATAY 数据表(HTML) 61 Page - STMicroelectronics |
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61 / 100 page ![]() STM8AF61xx, STM8AF51xx Electrical characteristics 61/100 Table 20. Total current consumption and timing in halt, fast active halt and slow active halt modes at VDD = 5.0 V Symbol Parameter Conditions Typ Max Unit IDD(H) Supply current in halt mode Flash powered down 6.5 10(1) 1. Maximum values at 55 °C, tested in production according to the actual product temperature ranges. µA Flash in stand-by mode 64 IDD(FAH) Supply current in fast active halt mode Crystal osc 16 MHz/128 1050 HSE osc 16 MHz/128 490 LSI RC 128 kHz 150 200(1) IDD(SAH) Supply current in slow active halt mode LSI RC 128 kHz 11 30(1) tWU(FAH) Wake-up time from fast active halt mode to run mode 2(2) 2. Data based on characterization results, not tested in production. µs tWU(SAH) Wake-up time from slow active halt mode to run mode 100(2) Table 21. Total current consumption in run, wait and slow mode at VDD = 3.3 V Symbol Parameter Conditions Typ Max Unit IDD(RUN) Supply current in run mode All peripherals off, code executed from RAM HSE Crystal oscillator fCPU = fMASTER = 24 MHz 4 mA HSE external clock fCPU = fMASTER = 24 MHz 3.8 HSE Crystal oscillator fCPU = fMASTER = 16 MHz 2.9 HSE external clock fCPU = fMASTER = 16 MHz 2.7 HSI internal RC fCPU = fMASTER = 16 MHz 2.55 HSI internal RC 16 MHz/8 fCPU = fMASTER = 2 MHz 1.2 |
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