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数据搜索系统，热门电子元器件搜索 |
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STM8AP5X2ATAY 数据表(PDF) 69 Page - STMicroelectronics |
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STM8AP5X2ATAY 数据表(HTML) 69 Page - STMicroelectronics |
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69 / 100 page  STM8AF61xx, STM8AF51xx Electrical characteristics 69/100 11.3.3 Internal clock sources and timing characteristics Subject to general operating conditions for VDD and TA. High speed internal RC oscillator (HSI) Figure 19. Typical HSI frequency vs VDD @ four temperatures Table 26. HSI oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency 16 MHz ACCHS HSI oscillator user trimming accuracy Trimmed by the application for any VDD and TA conditions -1(1) 1. Tested in production 1(1) % HSI oscillator accuracy (factory calibrated) VDD = 5.0 V, TA = 25°C -1(1) 1(1) VDD = 5.0 V, 25 °C ≤TA ≤85 °C ± 2 VDD = 5.0 V, 25 °C ≤TA ≤125 °C -3(1) 3(1) VDD = 3.0 V ≤VDD ≤ 5.5 V, -40 °C ≤TA ≤ 125 °C -5(1) 5(1) tsu(HSI) HSI oscillator wake-up time including calibration 2(2) 2. Guaranteed by design, not tested in production µs -3% -2% -1% 0% 1% 2% 3% 2.5 3 3.5 4 4.5 5 5.5 6 VDD [V] -40°C 25°C 85°C 125°C |
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