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STM8L101F2P3ATR 数据表(PDF) 63 Page - STMicroelectronics |
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STM8L101F2P3ATR 数据表(HTML) 63 Page - STMicroelectronics |
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63 / 81 page ![]() STM8L101xx Electrical parameters Doc ID 15275 Rev 11 63/81 Electromagnetic interference (EMI) Based on a simple application running on the product (toggling 2 LEDs through the I/O ports), the product is monitored in terms of emission. This emission test is in line with the norm SAE J 1752/3 which specifies the board and the loading of each pin. Absolute maximum ratings (electrical sensitivity) Based on two different tests (ESD and LU) using specific measurement methods, the product is stressed in order to determine its performance in terms of electrical sensitivity. For more details, refer to the application note AN1181. Electrostatic discharge (ESD) Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts*(n+1) supply pin). This test conforms to the JESD22-A114A/A115A standard. Table 35. EMI data (1) 1. Not tested in production. Symbol Parameter Conditions Monitored frequency band Max vs. Unit 16 MHz SEMI Peak level VDD = 3.6 V, TA = +25 °C, LQFP32 conforming to IEC61967-2 0.1 MHz to 30 MHz -3 dB μV 30 MHz to 130 MHz -6 130 MHz to 1 GHz -5 SAE EMI Level 1 - Table 36. ESD absolute maximum ratings Symbol Ratings Conditions Maximum value (1) 1. Data based on characterization results, not tested in production. Unit VESD(HBM) Electrostatic discharge voltage (human body model) TA = +25 °C 2000 V VESD(CDM) Electrostatic discharge voltage (charge device model) 500 |
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