STM8L101F2P3ATR datasheet(39/81 Pages) STMICROELECTRONICS

39 / 81 page

STM8L101xx

Electrical parameters

Doc ID 15275 Rev 11

39/81

Table 14.

Current characteristics

Symbol

Ratings

Max.

Unit

IVDD

Total current into VDD power line (source)

IVSS

Total current out of VSS ground line (sink)

IIO

Output current sunk by IR_TIM pin (with high sink LED

driver capability)

Output current sunk by any other I/O and control pin

Output current sourced by any I/Os and control pin

-25

IINJ(PIN)

Injected current on true open-drain pins (PC0 and PC1)(1)

Positive injection is not possible on these I/Os. VIN maximum must always be respected. IINJ(PIN) must

never be exceeded. A negative injection is induced by VIN<VSS.

-5

Injected current on any other pin (2)

IINJ(PIN) must never be exceeded. This is implicitly insured if VIN maximum is respected. If VIN maximum

cannot be respected, the injection current must be limited externally to the IINJ(PIN) value. A positive

injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS.

±5

ΣIINJ(PIN)

Total injected current (sum of all I/O and control pins) (3)

When several inputs are submitted to a current injection, the maximum

ΣIINJ(PIN) is the absolute sum of the

positive and negative injected currents (instantaneous values). These results are based on

characterization with

ΣIINJ(PIN) maximum current injection on four I/O port pins of the device.

±25

Table 15.

Thermal characteristics

Symbol

Ratings

Value

Unit

TSTG

Storage temperature range

-65 to +150

° C

Maximum junction temperature

150

STM8L101F2P3ATR 数据表(PDF) 39 Page - STMicroelectronics

STM8L101F2P3ATR 数据表(HTML) 39 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81

数据表下载