STM8L101F2P3ATR datasheet(49/81 Pages) STMICROELECTRONICS

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STM8L101xx

Electrical parameters

Doc ID 15275 Rev 11

49/81

9.3.5

Memory characteristics

TA = -40 to 125 °C unless otherwise specified.

Table 24.

RAM and hardware registers

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRM

Data retention mode (1)

Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware

registers (only in Halt mode). Guaranteed by characterization, not tested in production.

Flash memory

Halt mode (or Reset)

1.4

Table 25.

Flash program memory

Symbol

Parameter

Conditions

Min

Typ

Max

(1)

Unit

VDD

Operating voltage

(all modes, read/write/erase)

fMASTER = 16 MHz

1.65

3.6

tprog

Programming time for 1- or 64-byte (block)

erase/write cycles (on programmed byte)

-6

Programming time for 1- to 64-byte (block)

write cycles (on erased byte)

-3

Iprog

Programming/ erasing consumption

TA=+25 °C, VDD = 3.0 V

0.7

TA=+25 °C, VDD = 1.8 V

tRET

Data retention (program memory)

after 10k erase/write cycles

at TA = +85 °C

TRET = 55 °C

20(1)

years

Data retention (data memory)

after 10k erase/write cycles

at TA = +85 °C

TRET = 55 °C

20(1)

Data retention (data memory)

after 300k erase/write cycles

at TA = +125 °C

TRET = 85 °C

1(1)

NRW

Erase/write cycles (program memory)

See notes (1)(2)

10(1)

kcycles

Erase/write cycles (data memory)

See notes (1)(3)

300(1)(4)

Data based on characterization results, not tested in production.

Retention guaranteed after cycling is 10 years at 55 °C.

Retention guaranteed after cycling is 1 year at 55 °C.

Data based on characterization performed on the whole data memory (2 Kbytes).

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