BFS520 datasheet(28/130 Pages) NXP

28 / 130 page

NXP Semiconductors RF Manual 16th edition

1.4.5 802.11n DBDC and 802.11ac WLAN

Application diagram

bra502

antenna

low pass

lter

bandpass

lter

medium

power

amplier

APPLICATION

CHIPSET

PActrl

SPDT

switch

LNA

Recommended products

Function

Product

Package

Type

Medium

power

amplifier

MMIC

Medium power

amplifier

SOT89

BGA7024

BGA7027

SOT908

BGA7124

BGA7127

Function

Product

Package

Type

LNA

RF transistor

SiGe:C

transistor

SOT343F

BFU730F

BFU760F

MMIC

SiGe:C MMIC

SOT883C

BFU730LX

Product highlight:

BFU760F NPN silicon germanium microwave transistor

The BGU760F is part of the family of 6th (Si) and 7th (SiGe:C)

generation RF transistors and can be used to perform nearly any RF

function. These next-generation wideband transistors offer the best

RF noise figure versus gain performance, drawing the lowest current.

This performance allows for better signal reception at low power and

enables RF receivers to operate more robustly in noisy environments.

Features

` System optimized gain of 12.5 dB @ 2.4 GHz and 11 dB @ 5.5 GHz

` Low noise figure (NF) of 1.1 dB @ 2.4 GHz and 5.5 GHz

` High input 1 dB gain compression (P

i(1dB) ) of -8 dBm @ 2.4 GHz and

-5 dBm @ 5.5 GHz

` High input third order intercept point IP3

I of +3 dBm @ 2.4 GHz and

+8 dBm @ 5.5 GHz

` Only 8 external components required

BFS520 数据表(PDF) 28 Page - NXP Semiconductors

BFS520 数据表(HTML) 28 Page - NXP Semiconductors

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