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BFS520 数据表(PDF) 100 Page - NXP Semiconductors

部件名 BFS520
功能描述  RF Manual 16th edition
PDF  130 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors

BFS520 数据表(HTML) 100 Page - NXP Semiconductors

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101
NXP Semiconductors RF Manual 16th edition
Type
f
min
(MHz)
f
max
(MHz)
P
out
(W)
Matching
VDS
(V)
η
D
(%)
G
p
(dB)
Test
signal
Package
Applications
CLF1G0060-10*
0
6000
10
-
50
54
14
Pulsed
SOT1227
Cellular, WiMAX, ISM, avionics,
S-band, general purpose
CLF1G0060-30*
0
6000
30
-
50
54
14
Pulsed
SOT1227
Cellular, WiMAX, ISM, avionics,
S-band, general purpose
CLF1G0035-50*
0
3500
50
-
50
54
14.2
Pulsed
SOT467
Cellular, WiMAX, ISM, avionics,
S-band, general purpose
CLF1G0035-100*
0
3500
100
-
50
52
14.8
Pulsed
SOT467
Cellular, WiMAX, ISM, avionics,
S-band, general purpose
3.7.3.3 S-band LDMOS transistors
Type
Product
f
min
(MHz)
f
max
(MHz)
P1dB
(W)
VDS
(V)
P
L
(W)
η
D
(%)
G
p
(dB)
Test signal
Package
BLS6G2731-6G
Driver
2700
3100
6
32
6
33
15
pulsed
SOT975C
BLS6G3135(S)-20
3100
3500
20
32
20
45
15.5
pulsed
SOT608
BLS6G2735L(S)-30
2700
3500
30
32
30
50
13
pulsed
SOT1135
BLS2933-100
Final
2900
3300
100
32
100
40
8
pulsed
SOT502A
BLS7G2325L-105
2300
2500
105
30
105
55
16.5
pulsed
SOT502A
BLS6G2731(S)-120
2700
3100
120
32
120
48
13.5
pulsed
SOT502
BLS6G3135(S)-120
3100
3500
120
32
120
43
11
pulsed
SOT502
BLS6G2731S-130
2700
3100
130
32
130
50
12
pulsed
SOT922-1
BLS6G2933S-130
2900
3300
130
32
130
47
12.5
pulsed
SOT922-1
BLS7G2933S-150
2900
3300
150
32
150
47
13.5
pulsed
SOT922-1
BLS7G2729L(S)-350P
2700
2900
350
32
350
50
13.5
pulsed
SOT539
BLS7G3135L(S)-350P
3100
3500
350
32
350
43
10
pulsed
SOT539
3.8 Wireless microcontroller chipsets and modules
Type
Module/
single chip
Application
TX power Receiver sensitivity
TX
current
RX
current
Operating
voltage
Form
factor
JN5148-001-M00
Module
2.4-2.4835 GHz
+2.5 dBm
–95 dBm
15 mA 17.5 mA
2.3-3.6 V
Integral antenna
18 x 32 mm
JenNet & IEEE802.15.4
JN5148-001-M03
Module
2.4-2.4835 GHz
+2.5 dBm
–95 dBm
15 mA 17.5 mA
2.3-3.6 V
U.FL connector
18 x 30 mm
JenNet & IEEE802.15.4
JN5148-001-M04
Module
2.4-2.4835 GHz
+20 dBm
–98 dBm
110mA
23 mA
2.7-3.6 V
U.FL connector
18 x 41 mm
JenNet & IEEE802.15.4
JN5142-J01
Single chip
2.4-2.4835 GHz
+2.5 dBm
–95 dBm
15 mA 17.5 mA
2.3-3.6 V
6 x 6 mm QFN40
JenNet-IP
JN5148-J01
Single chip
2.4-2.4835 GHz
+2.5 dBm
–95 dBm
15 mA 17.5 mA
2.3-3.6 V
8 x 8 mm QFN56
JenNet-IP
JN5142-001
Single chip
2.4-2.4835 GHz
+2.5 dBm
–95 dBm
15 mA 17.5 mA
2.3-3.6 V
6 x 6 mm QFN40
RF4CE & IEEE802.15.4
JN5148-001
Single chip
2.4-2.4835 GHz
+2.5 dBm
–95 dBm
15 mA 17.5 mA
2.3-3.6 V
8 x 8 mm QFN56
JenNet & IEEE802.15.4
JN5148-Z01
Single chip
2.4-2.4835 GHz
+2.5 dBm
–95 dBm
15 mA 17.5 mA
2.3-3.6 V
8 x 8 mm QFN56
ZigBee PRO
3.7.4 Gallium Nitride (GaN) RF power amplifiers
Device naming conventions GaN RF power amplifiers
Device naming conventions GaN RF power amplifiers
C L F 1G 0040 S # P
P:
push-pull indicator, P = push-pull type; no P means single-ended transistor
nominal P3dB in Watts: eg 50 = 50W
S earless type, S = earless; no S means eared package
upper frequency, 10x GHz value: 35 = 3.5GHz; 60 = 6.0GHz
lower frequency, 10x GHz value: 00 = 0GHz or DC; 40 = 4.0GHz
1G: technology generation: 1G = 1st generation
F: package style: F = ceramic, P = overmolded plastic
L: high frequency power transistor
C: primary material identifier: C = wide band-gap compound materials, eg GaN
35 to 60:
00 to 40:
2 to 1500:
Bold red = new, highly recommended product
* Check status in section 3.1, as this type is not yet released for mass production



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