 |
数据搜索系统，热门电子元器件搜索 |
|
|
数据搜索系统，热门电子元器件搜索 |
|
BFS520 数据表(PDF) 69 Page - NXP Semiconductors |
|
|
|||||||||||||||||||||||||||||
BFS520 数据表(HTML) 69 Page - NXP Semiconductors |
|
|
69 / 130 page  70 NXP Semiconductors RF Manual 16th edition A disruptive technology, setting new performance boundaries for RF power amplifiers If independent market research claims come true, GaN product sales will exceed 300 Musd in 2014. This can only happen if GaN is made available through mainstream semiconductor companies, and NXP is the first to make this happen. So, what is it about GaN and RF power applications? Simply put, GaN makes a step increase in efficiency and power density performance over Si LDMOS in most applications. This can be quantified in the Johnson’s Figure of Merit (FoM) – a combination of significant RF performance variables that has a baseline for Si at 1 and leads to a FoM for GaN of 324. To put this into some context, GaAs, another commonly used compound material in RF, has a FoM of 1.44. With such a high FoM rating, GaN truly represents a breakthrough technology. GaN products are termed High-Electron Mobility Transistors (HEMT), a name that captures one of the intrinsic benefits of GaN: the high electron drift velocity. These transistors are depletion-mode devices, that is, devices that are normally on, without the need for applying a gate bias. A negative gate bias will be needed to switch the transistors off. This biasing is not straightforward, but at NXP, we've developed complete solutions (not just individual components) that include a tried and tested bias circuit. We also provide continuous application support throughout the life of the product. A further advantage of GaN is that it is a very hard structure able to withstand very high temperatures. NXP’s GaN transistors will be specified to a maximum temperature of 250 °C, compared to 225 °C for Si LDMOS. Special packages are required to support such high temperatures. In this area, NXP's GaN customers benefit from our 30-year legacy in RF power products, and our large industrial base. As a GaN supplier, we deliver excellence in product reliability and cost, and give our customers a high degree of confidence in the supply chain. It's part of what's needed to take GaN to the mainstream. The first NXP GaN products will be unmatched broadband amplifiers for use in applications requiring high RF performance across a wide range of frequencies up to 3.5 GHz. NXP’s first generation GaN process is designed for products operating from a 50V supply voltage, delivering best-in-class efficiency and linearity. The products will use industry-standard package footprints enabling customers to adopt NXP’s products into existing designs without changing the mechanical design. Next-generation GaN devices from NXP will be super-efficient, enabling a breakthrough in performance for the largest RF power market segment: cellular base stations. In turn this technology will enable a departure from linear amplifier topologies with the onset of switched mode power amplifier (SMPA) concepts. NXP’s commitment to exploit the technology in a full portfolio of products will also lead to products for higher frequency applications up to 10 GHz. GaN RF power amplifiers Type f min(MHz) fmax(MHz) P out(W) Matching V DS(V) η D(%) G p(dB) Test signal Package Planned release Applications CLF1G0035-50 0 3500 50 - 50 54 14.2 Pulsed SOT467 Q312 Cellular, WiMAX, ISM, avionics, S-band, general purpose CLF1G0035-100 0 3500 100 - 50 52 14.8 Pulsed SOT467 Q412 Cellular, WiMAX, ISM, avionics, S-band, general purpose CLF1G0035-200 0 3500 200 - 50 50 14.2 Pulsed SOT1228 Q313 Cellular, WiMAX, ISM, avionics, S-band, general purpose CLF1G0060-10 0 6000 10 - 50 54 14 Pulsed SOT1227 Q113 Cellular, WiMAX, ISM, avionics, S-band, general purpose CLF1G0060-30 0 6000 30 - 50 54 14 Pulsed SOT1227 Q113 Cellular, WiMAX, ISM, avionics, S-band, general purpose CLF2G2536-100 2500 3600 100 I/O 28 65 13 Pulsed SOT1135 Q413 Cellular, WiMAX, S-band CLF2G2536-300 2500 3600 300 I/O 28 65 13 Pulsed SOT502 Q413 Cellular, WiMAX, S-band CLF3G4060-30 4000 6000 30 I/O 28 55 13 Pulsed SOT1135 Q114 C-band CLF3G4060-350 4000 6000 350 I/O 28 55 13 Pulsed SOT502 Q114 C-band 2.6Technology 2.6.1 ThefirstmainstreamsemiconductorcompanytoofferGaNproducts NXP Galium-Nitride (GaN) broadband amplifiers |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Chinese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
