BFS520 datasheet(45/130 Pages) NXP

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NXP Semiconductors RF Manual 16th edition

2.1.3

Dohertyamplifiertechnologyforstate-of-the-artwirelessinfrastructure

Best-in-class PA designs enable considerable energy savings

NXP’s latest power amplifier designs let the wireless infrastructure run with significantly higher energy

efficiency – towards “Green Base Stations”. In order to achieve the highest efficiencies currently possible,

NXP combines its latest generations of LDMOS technology (Gen7 & 8) with the Doherty concept. The high

performance of our LDMOS technology, matched with the efficiency of the Doherty technology, creates

power amplifiers that offer high efficiency and high gain, are easily linearizable, and are more cost-effective

to operate.

Developed by W.H. Doherty in 1936, the Doherty amplifier remained largely unused because the dominant

mobile communication system modulation techniques (FM, GMSK, and EDGE) did not require high peak-to-

average ratio (PAR) signals. For today's base stations, however, transmitting 3G, 4G, and multi-carrier signals

makes the high power and added efficiency of the Doherty approach the preferred option for most service

providers.

NXP’s Doherty designs ensure high efficiency while maintaining a very similar peak power capability of two

transistors combined. The input and output sections are internally matched, benefiting the amplifiers with

high gain, good gain flatness, and phase linearity over a wide frequency band.

Key features & benefits

` Contains splitter, main and peak amplifier, delay lines,

and combiner in one package

- 40% efficiency @ 10 W average power

- No additional tuning in manufacturing

` Design is as easy as with a single Class AB transistor

` Ideally suited for space-constrained applications

(e.g. remote radio heads, antenna arrays)

` Currently available for TD-SCDMA (BLD6G21L(S)-50) and

W-CDMA (BLD22L(S)-50); see section 3.7.1.4 for details

Integrated Doherty

NXP offers the world’s first fully integrated Doherty designs.

From the outside these devices look like ordinary transistors.

In fact, they are completely integrated Doherty amplifiers that

readily deliver the associated high efficiency levels for base

station applications. With the ease of design-in of an ordinary

Class AB transistor, they also provide significant

space and cost savings.

BFS520 数据表(PDF) 45 Page - NXP Semiconductors

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