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BFS520 数据表(PDF) 72 Page - NXP Semiconductors |
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BFS520 数据表(HTML) 72 Page - NXP Semiconductors |
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72 / 130 page  73 NXP Semiconductors RF Manual 16th edition Features QUBiC4+ QUBiC4X QUBiC4Xi Release for production 2004 2006 2008 CMOS/bipolar CMOS 0.25 um, bipolar 0.4 um, double poly, deep trench, Si CMOS 0.25 um, bipolar LV 0.4 um, double poly, deep trench, SiGe:C CMOS 0.25 um, bipolar LV 0.3 um, double poly, deep trench, SiGe:C LV NPN f T/Fmax (GHz) 35/80 (Si) 110/140 (SiGe:C) 180/200 (SiGe:C) HV NPN f T/Fmax (GHz) 28/70 (Si) 60/120 (SiGe:C) 90/200 (SiGe:C) NPN BVce0: HV/LV ** 5.9 / 3.8 V 3.2 / 2.0 V 2.5 / 1.4 V V-PNP f T / BVcb0 (GHz / V) 5 / >9 Planned Planned CMOS voltage / dual gate 2.5 / 3.3 V 2.5 V 2.5 V Noise figure NPN (dB) 2 GHz: 1.1 10 GHz: 1.0 10 GHz: 0.6 RFCMOS f T (GHz) NMOS 58, PMOS 19 NMOS 58, PMOS 19 NMOS 58, PMOS 19 Isolation (60 dB @ 10 GHz) STI and DTI STI and DTI STI and DTI Interconnection (AlCu with CMP W Plugs) 5 LM, 3 µm top metal 5 LM, 3 µm top metal 2 µm M4 5 LM, 3 µm top metal Capacitors NW, DN, Poly-Poly 5fF/um2 MIM NW, DN, Poly-Poly 5fF/um2 MIM NW, DN, Poly-Poly 5fF/um2 MIM Resistors (Ω/sq) Poly (64/137/220/2K) Active (12, 57), high-precision SiCr (270) Poly (64/220/330/2K), Active (12, 57), high-precision SiCr (tbd) Poly (64/220/330/2K), Active (12, 57), high-precision SiCr (tbd) Varicaps (single-ended & differential) 1x single-ended, Q > 40 3x differential, Q 30-180 1x single-ended, Q > 40 3x differential, Q 30-180 1x single-ended, Q > 40 3x differential, Q 30-180 Inductors (1.5nH @ 2 GHz) - scalable Q > 21, thick metal, deep trench isolation, high R substrate Q > 21, thick metal, deep trench isolation, high R substrate Q > 21, thick metal, deep trench isolation, high R substrate Other devices LPNP, isolated NMOS, VPNP, transformers Isolated-NMOS, transformers Isolated-NMOS, transformers Mask count 32 (MIM) / 34 / 33 (HVNPN) / 35 (VPNP) 36 (MIM) 36 (MIM) QUBiC4+ BiCMOS f /f max = 35/80 GHz +DG +TFR +VPNP +HVNPN -4ML SiGe:C f / fmax = 110/140 GHz QUBiC4X SiGe:C f T T / fmax = 180/200 GHz QUBiC4Xi QUBiC4+ ` Baseline, 0.25 µm CMOS, single poly, 5 metal ` Digital gate density 26k gates/mm2 ` f T/fMAX= 35/80 GHz ` +TFR – Thin Film Resistor ` +DG – Dual Gate Oxide MOS ` +HVNPN – High Voltage NPN ` +VPNP – Vertical PNP (high V early) ` -4ML – high-density 5fF/µm2 MIM capacitor ` Wide range of active and high-quality passive devices ` Optimized for up to 5 GHz applications QUBiC4X ` SiGe:C process ` f T/fMAX= 110/140 GHz ` Optimized for applications up to 30 GHz QUBiC4Xi ` SiGe:C process ` Improves f T/fmax up to 180/200 GHz ` Optimized for ultra-low noise microwave above 30 GHz |
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