BFS520 datasheet(71/130 Pages) NXP

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NXP Semiconductors RF Manual 16th edition

2.6.3

LookingforaleaderinSiGe:C?Youjustfoundus!

NXP QUBiC4 process technology

NXP's innovative, high-performance SiGe:C QUBiC4 process lets customers implement more functions into

less space, with the added benefits of competitive cost, superb reliability, and significant manufacturing

advantages. Our state-of-the-art QUBiC4 technology and extensive IP availability speed the migration from

GaAs components to silicon by enabling cutting-edge products with best-in-class low noise performance,

linearity, power consumption, immunity to out-of-band signals, spurious performance, and output power.

QUBiC is a mature process that has been in mass production since 2002 and has had continuous performance

upgrades added ever since. The QUBiC4 process is automotive-qualified and dual-sourced in two high-

volume, NXP-owned 8-inch waferfabs that provide flexible, low-cost manufacturing with high yields and very

low ppm in the field.

There are three QUBiC4 variants, each with its own

benefits for specific application areas

QUBiC4+

The QUBiC4+ BiCMOS process features 0.25 μm CMOS with

5 metal layers for integration of dense digital logic-based

smart functionality, a rich set of active and passive devices for

high-frequency mixed-signal designs, including thick top metal

layers for high-quality inductors. The device set includes

35 GHz f

T NPNs with 3.8 V breakdown voltage (BVce0) and low

noise figure (NF < 1.1 dB @ 2 GHz), 5 GHz f

T VPNPs, a 28 GHz

high-voltage NPN with 5.9 V breakdown voltage, differential

and single-ended varicaps with Q-factor > 30, scalable

inductors with Q-factor > 20, 800 MHz FT lateral PNPs,

0.25 μm CMOS, 137, 220 & 12 to 2000 ohm/sq. poly and

active resistors, a 270 ohm/sq. SiCr thin film resistor,

a 5.7 fF/μm2 oxide capacitor and a 5 fF/μm2 MIM capacitor,

1 to 6 fF/μm2 oxide capacitors and various other devices

including L-PNPs, isolated NMOS, 3.3 V CMOS and RF-CMOS

transistors capacitor. The QUBiC4+ process is silicon-based

and ideal for applications up to 5 GHz (f

T = 35 GHz,

NF < 1.1 dB @ 2 GHz), as well as for medium power amplifiers

up to 33 dBm.

QUBiC4X

The QUBiC4X BiCMOS process is a SiGe:C-based extension

of the QUBiC process for high-frequency mixed-signal designs

and offers a rich set of devices, including a 110 GHz f

T NPN with

2.0 V breakdown voltage and very low noise figure (NF < 1.0 dB @

10 GHz), 0.25 μm CMOS, a variety of resistors, a 5.7 fF/μm2 oxide

capacitor, and a 5 fF/μm2 MIM capacitor.

The QUBiC4X is ideal for applications that typically operate at

up to 30 GHz (f

T = 110 GHz , NF < 1.0 dB @ 10 GHz) and ultra-

low noise applications such as LNAs and mixers.

QUBiC4Xi

The QUBiC4Xi BiCMOS process further enhances the QUBiC4X

process and offers an additional feature set of devices for high-

frequency mixed-signal designs. These include 180 GHz f

NPNs with 1.4 V breakdown voltage and ultra-low noise figure

(NF < 0.7 dB @ 10 GHz), 0.25 μm CMOS, several resistors,

a 5.7 fF/μm2 oxide capacitor and a 5 fF/μm2 MIM capacitor.

QUBiC4Xi represents the newest SiGe:C process, with

improved f

T (> 200 GHz) and even lower noise figure

(NF < 0.6 dB @ 10 GHz). It is ideal for applications beyond

30 GHz, such as LO generators.

BFS520 数据表(PDF) 71 Page - NXP Semiconductors

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