BFS520 datasheet(94/130 Pages) NXP

94 / 130 page

NXP Semiconductors RF Manual 16th edition

3.7.1 RF power transistors for base stations

Device naming conventions RF power transistors for base stations

Why choose NXP‘s RF power transistors for base stations:

` Leading technology (generations 6, 7, and 8 of LDMOS)

` Highest efficiency

` Best ruggedness

` Advanced Doherty amplifier designs

` Very broad band (video bandwidth enhanced) devices

` Industry’s first 3.8 GHz Doherty

` Industry's first three-way, 900 MHz Doherty

` Industry's first 50 V, 600 W, single-package Doherty

NXP offers complete line-ups of RF power transistors operating from 800 MHz right up to 3.8 GHz for base stations,

covering all cellular technologies [MC-GSM/EDGE, TDMA, (TD-S)CDMA, W-CDMA/UMTS, LTE] and WiMAX infrastructures.

B L F 6 G 22 L S -45 P R B N G V

video bandwidth enhanced

gullwing-shaped leads

specialty

option: current sense lead

enhanced ruggedness

push-pull device

P1dB power

option: earless package

option: low thermal resistivity

operating frequency (in 100MHz; maximum)

G: standard LDMOS

LDMOS technology generation

F: LDMOS transistor in ceramic package

C: LDMOS transistor in air cavity plastic (ACP) package

D: fully integrated Doherty amplifier

M: MMIC module

L: high frequency power transistor

B: semiconductor die made of Si

3.7

RF power transistors

NEW: RF power transistor selection guide on www.nxp.com/rfpower

Easy-to-use parametric filters help you choose the right RF

power transistor for your design.

3.7.1.1

0.7 - 1.0 GHz line-up

Test signal performance

Type

Product

min

(MHz)

max

(MHz)

P1dB

(W)

Matching

VDS

(V)

(W)

(dB)

(%)

(dB)

Test signal

Package

BLP7G22-10*

Driver

700

2200

7.0

2-c WCDMA

SOT1179

BLM6G10-30(G)

MMIC

920

960

I/O

11.8

11.5

2-c WCDMA

SOT822

BLF6G10L-40BRN

Driver/final

700

1000

2.5

12.0

2-c WCDMA

SOT1112A

BLF6G10(S)-45

700

1000

16.5

2-c WCDMA

SOT608

BLP7G07S-140P(G)*

Final

700

900

140

6.0

2-c WCDMA

SOT1224

BLF8G10L(S)-300P*

850

960

300

I/O

7.0

2-c WCDMA

SOT539

BLF8G10L(S)-160

920

960

160

I/O

6.6

19.7

2-c WCDMA

SOT502

BLF7G10L(S)-250

920

960

250

I/O

6.2

30.5

19.5

2-c WCDMA

SOT502

BLF6G10(LS)-200RN

688

1000

200

7.0

28.5

2-c WCDMA

SOT502

BLF6G10(LS)-135RN

700

1000

135

26.5

7.1

2-c WCDMA

SOT502

BLF6H10L(S)-160

700

1000

160

5.5

2-c WCDMA

SOT467

BLF6G10(LS)-160RN

700

1000

160

7.0

22.5

2-c WCDMA

SOT502

BLF8G10L(S)-160V*

700

1000

160

I/O

6.6

2-c WCDMA

SOT1244

BLF8G10LS-200GV*

700

1000

200

I/O

6.5

19.3

2-c WCDMA

SOT1244C

BLF6G10L(S)-260PRN

700

1000

260

8.1

26.5

2-c WCDMA

SOT539

BLF8G10LS-270GV*

700

1000

270

I/O

6.8

19.6

2-c WCDMA

SOT1244C

BLF8G10LS-400PGV*

700

1000

400

I/O

7.0

19.4

2-c WCDMA

SOT1242C

BLP7G09S-140P(G)*

900

1000

140

6.0

2-c WCDMA

SOT1224

Bold red = new, highly recommended product

* Check status in section 3.1, as this type is not yet released for mass production

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