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BFS520 数据表(PDF) 30 Page - NXP Semiconductors |
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BFS520 数据表(HTML) 30 Page - NXP Semiconductors |
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30 / 130 page ![]() 31 NXP Semiconductors RF Manual 16th edition 1.5 Automotive 1.5.1 SDARS & HD radio Application diagram Recommended products Function Product Package Type 1st stage LNA MMIC Low-noise wideband amplifier SOT343F BFU730F Function Product Package Type 2nd stage LNA MMIC General-purpose wideband amplifier SOT343F BFU690F SOT363 BGA2869 BGA2851 BGA2803 Function Product Package Type 3rd stage LNA RF transistor SiGe:C transistor SOT343F BFU690F BFU725F/N1 BFU790F Product highlight: BFU730F NPN wideband silicon germanium RF transistor The BGU730F is part of the family of 6th (Si) and 7th (SiGe:C) generation RF transistors and can be used to perform nearly any RF function. These next-generation wideband transistors offer the best RF noise figure versus gain performance, drawing the lowest current. This performance allows for better signal reception at low power and enables RF receivers to operate more robustly in noisy environments. Features At 2.3 GHz ` High maximum power gain (Gp) of 17.6 dB ` Noise figure (NF) of 0.8 dB ` Input 1dB gain compression (Pi(1dB) ) of -15 dBm ` Input third order intercept point IP3 I of +4.7 dBm 001aan958 1st stage LNA antenna 2nd stage LNA 3rd stage LNA filter CHIPSET |
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