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BFS520 数据表(PDF) 70 Page - NXP Semiconductors |
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BFS520 数据表(HTML) 70 Page - NXP Semiconductors |
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70 / 130 page ![]() 71 NXP Semiconductors RF Manual 16th edition 2.6.2 CompletingNXP'sRFpowertransistoroffering:productsinplasticpackages(OMP) NXP is currently developing a complete line of overmolded plastic (OMP) RF power transistors and MMICs with peak powers ranging from 3 to 500 W. The main benefit of plastic packages is cost effectiveness with little or no impact on performance. The range of plastic devices will complement the extensive range of RF power products that NXP offers in ceramic packages for all frequency ranges and applications up to 2.45 GHz. Products in development ` Single-stage broadband drivers in HSOP-outlines, from 3 to 10 W ` Single-stage OMP drivers from 25 to 45 W, replacing their ceramic equivalents for cost-sensitive applications ` Dual-stage MMICs from 30 to 60 W that can be used as high-gain drivers or combined as low-power dual-stage Doherty amplifiers ` Fully integrated plug-and-play Doherty PAs in a single package (50 to 100 W) ` Final transistors in OMP package (SOT502-sized) ranging from 140 to 200 W in frequency bands from 730 MHz to 2.2 GHz ` Final transistors in OMP package (SOT502-sized) ranging from 3 to 500 W in ISM frequency bands from a few MHz up to 2.45 GHz Some of these products are available for sampling now, while the rest of the portfolio will be rolled out throughout 2012. Type f min (MHz) f max (MHz) P1dB (W) Matching Package Description BLP7G22-10 700 2200 10 - SOT1179 Gen7 OMP LDMOS transistor for WCDMA & GSM applications BLM7G22S-60PB(G) 2000 2200 60 I/O SOT1212 Gen7 LDMOS MMIC for WCDMA applications (gull-wing) BLP7G07S-140P(G) 700 900 140 O SOT1224 Gen7 OMP push-pull LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing) BLP7G09S-140P(G) 900 1000 140 O SOT1224 Gen7 OMP push-pull LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing) RF power products in plastic packages (OMP) |
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