BFS520 datasheet(123/130 Pages) NXP

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124

NXP Semiconductors RF Manual 16th edition

7. Abbreviations

3-way

Doherty design using 3 discrete transistors

Amplitude Modulation

ASIC

Application Specific Integrated Circuit

ASYM

Asymmetrical design of Doherty (main and

peak device are different)

BPF

Band Pass Filter

BUC

Block Upconverter

CATV

Community Antenna Television

CDMA

Code Division Multiple Access

CMMB

Chinese Multimedia Mobile Broadcasting

CMOS

Complementary Metal Oxide Semiconductor

CQS

Customer Qualification Samples

DAB

Digital Audio Broadcasting

DECT

Digital Enhanced Cordless

Telecommunications

DiSEqC

Digital Satellite Equipment Control

DSB

Digital Signal Processor

DVB

Digital Video Broadcasting

EDGE

Enhanced Data Rates for GSM Evolution

ESD

Electro Static Device

FET

Field Effect Transistor

Frequency Modulation

GaAs

Gallium Arsenide

GaN

Gallium Nitride

Gen

Generation

GPS

Global Positioning System

GSM

Global System for Mobile communications

HBT

Heterojunction Bipolar Transistor

HDTV

High Definition Television

High Frequency (3-30 MHz)

HFC

Hybrid Fiber Coax

HFET

Heterostructure Field Effect Transistor

HPA

High Power Amplifier

HVQFN

Plastic thermally enHanced Very thin Quad

Flat pack No leads

Intermediate Frequency

ISM

Industrial, Scientific, Medical - reserved

frequency bands

LDMOS

Laterally Diffused Metal-Oxide-Semiconductor

LNA

Low Noise Amplifier

LNB

Low Noise Block

Local Oscillator

LPF

Low Pass Filter

MESFET

Metal Semiconductor Field Effect Transistor

MMIC

Monolithic Microwave Integrated Circuit

MMPP

Main and peak devices realized separately in

halves of push-pull transistor

MPPM

Main and peak device realized in same push-

pull transistor (2 times)

MoCA

Multimedia over Coax Alliance

MOSFET

Metal–Oxide–Semiconductor Field Effect

Transistor

MPA

Medium Power Amplifier

MRI

Magnetic Resonance Imaging

Noise Figure

NIM

Network Interface Module

NMR

Nuclear Magnetic Resonance

Power Amplifier

PAR

Peak to Average Ratio

PEP

Peak Envelope Power

pHEMT

pseudomorphic High Electron Mobility

Transistor

PLL

Phase Locked Loop

QUBiC

Quality BiCMOS

Radio Frequency

RFS

Release for Supply

RoHS

Restriction of Hazardous Substances

Receive

SARFT

State Administration for Radio, Film and

Television

SER

Serializer

SiGe:C

Sillicon Germanium Carbon

SMATV

Satellite Master Antenna Television

SMD

Surface Mounted Device

SPDT

Single Pole, Double Throw

SYM

Symmetrical design of Doherty (main and peak

device are the same type of transistor)

TD-SCDMA Time Division-Synchronous Code Division

Multiple Access

TCAS

Traffic Collision Avoidance Systems

TMA

Tower Mounted Amplifier

TTFF

Time to First Fix

Transmit

UHF

Ultra High Frequency (470-860 MHz)

UMTS

Universal Mobile Telecommunications System

VCO

Voltage Controlled Oscillator

VGA

Variable Gain Amplifier

VHF

Very High Frequency (30-300 MHz)

VoIP

Voice over Internet Protocol

VSAT

Very Small Aperture Terminal

WCDMA

Wideband Code Division Multiple Access

WiMAX

Worldwide Interoperability for Microwave

Access

WLAN

Wireless Local Area Network

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