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AM186ES-40VCW 数据表(PDF) 74 Page - Advanced Micro Devices

部件名 AM186ES-40VCW
功能描述  High Performance, 80C186-/80C188-Compatible and 80L186-/80L188-Compatible, 16-Bit Embedded Microcontrollers
PDF  102 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM186ES-40VCW 数据表(HTML) 74 Page - Advanced Micro Devices

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Am186/188ES and Am186/188ESLV Microcontrollers
PRELIMIN ARY
SWITCHING CHARACTERISTICS over COMMERCIAL operating ranges
PSRAM Read Cycle (20 MHz and 25 MHz)
Notes:
All timing parameters are measured at 1.5 V with 50 pF loading on CLKOUTA, unless otherwise noted. All output test conditions
are with CL =50 pF. For switching tests, VIL=0.45 V and VIH =2.4 V, except at X1 where VIH =VCC –0.5 V.
a
Testing is performed with equal loading on referenced pins.
b
If either spec 2 or spec 59 is met with respect to data hold time, the part will function correctly.
Parameter
Preliminary
Unit
20 MHz
25 MHz
No.
Symbol
Description
Min
Max
Min
Max
General Timing Requirements
1tDVCL
Data in Setup
10
10
ns
2tCLDX
Data in Hold(b)
33
ns
General Timing Responses
5tCLAV
AD Address Valid Delay and BHE
0
25
0
20
ns
7tCLDV
Data Valid Delay
0
25
0
20
ns
8tCHDX
Status Hold Time
0
0
ns
9tCHLH
ALE Active Delay
25
20
ns
10
tLHLL
ALE Width
tCLCL–10=40
tCLCL–10=30
ns
11
tCHLL
ALE Inactive Delay
25
20
ns
23
tLHAV
ALE High to Address Valid
20
15
ns
80
tCLCLX
LCS Inactive Delay
0
25
0
20
ns
81
tCLCSL
LCS Active Delay
0
25
0
20
ns
84
tLRLL
LCS Precharge Pulse Width
tCLCL+ tCLCH–3
tCLCL + tCLCH –3
ns
Read Cycle Timing Responses
24
tAZRL
AD Address Float to RD Active
0
0
ns
25
tCLRL
RD Active Delay
0
25
0
20
ns
26
tRLRH
RD Pulse Width
2tCLCL–15=85
2tCLCL–15=65
ns
27
tCLRH
RD Inactive Delay
0
25
0
20
ns
28
tRHLH
RD Inactive to ALE High(a)
tCLCH–3
tCLCH–3
ns
59
tRHDX
RD High to Data Hold on AD
Bus(b)
00
ns
66
tAVRL
A Address Valid to RD Low
tCLCL+ tCHCL–3
tCLCL+ tCHCL–3
ns
68
tCHAV
CLKOUTA High to A Address
Valid
025020
ns



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