I2CCON datasheet(58/210 Pages) MICROCHIP

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dsPIC30F2011/2012/3012/3013

DS70139G-page 58

EXAMPLE 6-5:

DATA EEPROM BLOCK WRITE

6.4

Write Verify

Depending on the application, good programming

practice may dictate that the value written to the mem-

ory should be verified against the original value. This

should be used in applications where excessive writes

can stress bits near the specification limit.

6.5

Protection Against Spurious Write

There are conditions when the device may not want to

write to the data EEPROM memory. To protect against

spurious EEPROM writes, various mechanisms have

been built-in. On power-up, the WREN bit is cleared;

also, the Power-up Timer prevents EEPROM write.

The write initiate sequence and the WREN bit together

help prevent an accidental write during brown-out,

power glitch, or software malfunction.

MOV

#LOW_ADDR_WORD,W0

; Init pointer

MOV

#HIGH_ADDR_WORD,W1

MOV

W1,TBLPAG

MOV

#data1,W2

; Get 1st data

TBLWTL

W2,[ W0]++

; write data

MOV

#data2,W2

; Get 2nd data

TBLWTL

W2,[ W0]++

; write data

MOV

#data3,W2

; Get 3rd data

TBLWTL

W2,[ W0]++

; write data

MOV

#data4,W2

; Get 4th data

TBLWTL

W2,[ W0]++

; write data

MOV

#data5,W2

; Get 5th data

TBLWTL

W2,[ W0]++

; write data

MOV

#data6,W2

; Get 6th data

TBLWTL

W2,[ W0]++

; write data

MOV

#data7,W2

; Get 7th data

TBLWTL

W2,[ W0]++

; write data

MOV

#data8,W2

; Get 8th data

TBLWTL

W2,[ W0]++

; write data

MOV

#data9,W2

; Get 9th data

TBLWTL

W2,[ W0]++

; write data

MOV

#data10,W2

; Get 10th data

TBLWTL

W2,[ W0]++

; write data

MOV

#data11,W2

; Get 11th data

TBLWTL

W2,[ W0]++

; write data

MOV

#data12,W2

; Get 12th data

TBLWTL

W2,[ W0]++

; write data

MOV

#data13,W2

; Get 13th data

TBLWTL

W2,[ W0]++

; write data

MOV

#data14,W2

; Get 14th data

TBLWTL

W2,[ W0]++

; write data

MOV

#data15,W2

; Get 15th data

TBLWTL

W2,[ W0]++

; write data

MOV

#data16,W2

; Get 16th data

TBLWTL

W2,[ W0]++

; write data. The NVMADR captures last table access address.

MOV

#0x400A,W0

; Select data EEPROM for multi word op

MOV

W0,NVMCON

; Operate Key to allow program operation

DISI

; Block all interrupts with priority <7 for

; next 5 instructions

MOV

#0x55,W0

MOV

W0,NVMKEY

; Write the 0x55 key

MOV

#0xAA,W1

MOV

W1,NVMKEY

; Write the 0xAA key

BSET

NVMCON,#WR

; Start write cycle

NOP

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