PIC16LC620-04SLASHSS datasheet(81/108 Pages) MICROCHIP

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Preliminary

DS30235G-page 81

PIC16C62X

12.1

DC CHARACTERISTICS:

PIC16C62X-04 (Commercial, Industrial, Extended)

PIC16C62X-20 (Commercial, Industrial, Extended)

Standard Operating Conditions (unless otherwise stated)

Operating temperature

–40

°C ≤ TA ≤ +85°C for industrial and

°C ≤ TA ≤ +70°C for commercial and

–40

°C ≤ TA ≤ +125°C for extended

Param

No.

Sym

Characteristic

Min

Typ† Max Units

Conditions

D001

D001A

Vdd

Supply Voltage

3.0

4.5

6.0

5.5

XT, RC and LP osc conﬁguration

HS osc conﬁguration

D002

Vdr

RAM Data Retention

Voltage (Note 1)

–

1.5*

–

Device in SLEEP mode

D003

Vpor

VDD start voltage to

ensure Power-on Reset

–

Vss

–

See section on power-on reset for details

D004

Svdd

VDD rise rate to ensure

Power-on Reset

0.05*

–

V/ms

See section on power-on reset for details

D005

VBOR

Brown-out Detect Voltage

3.7

4.0

4.3

4.4

BOREN conﬁguration bit is cleared

(Extended)

D010

D010A

D013

Idd

Supply Current (Note 2)

–

1.8

9.0

3.3

µA

XT and RC osc conﬁguration

FOSC = 4 MHz, VDD = 5.5V, WDT dis-

abled (Note 4)

LP osc conﬁguration, PIC16C62X-04

only

FOSC = 32 kHz, VDD = 4.0V, WDT dis-

abled

HS osc conﬁguration

FOSC = 20 MHz, VDD = 5.5V, WDT dis-

abled

D020

Ipd

Power Down Current (Note 3)

–

1.0

2.5

µA

VDD=4.0V, WDT disabled

(125

°C)

D023

∆IWDT

∆IBOR

∆ICOMP

∆IVREF

WDT Current (Note 5)

Brown-out Reset Current (Note 5)

Comparator Current for each Com-

parator (Note 5)

VREF Current (Note 5)

–

6.0

350

425

100

300

µA

VDD=4.0V

(125

°C)

BOR enabled, VDD = 5.0V

VDD = 4.0V

These parameters are characterized but not tested.

†

Data in "Typ" column is at 5.0V, 25

°C, unless otherwise stated. These parameters are for design guidance only and are

not tested.

Note 1:

This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.

The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin loading and

switching rate, oscillator type, internal code execution pattern, and temperature also have an impact on the current con-

sumption.

The test conditions for all IDD measurements in active operation mode are:

OSC1 = external square wave, from rail to rail; all I/O pins tri-stated, pulled to VDD,

MCLR = VDD; WDT enabled/disabled as speciﬁed.

The power down current in SLEEP mode does not depend on the oscillator type. Power down current is measured with

the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD or VSS.

For RC osc conﬁguration, current through Rext is not included. The current through the resistor can be estimated by the

formula Ir = VDD/2Rext (mA) with Rext in k

Ω.

The

∆ current is the additional current consumed when this peripheral is enabled. This current should be added to the

base IDD or IPD measurement.

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