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PIC16LC620-04/SS 数据表(PDF) 83 Page - Microchip Technology |
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PIC16LC620-04/SS 数据表(HTML) 83 Page - Microchip Technology |
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83 / 108 page ![]() © 1998 Microchip Technology Inc. Preliminary DS30235G-page 83 PIC16C62X 12.3 DC CHARACTERISTICS: PIC16C62XA/CR62XA-04 (Commercial, Industrial, Extended) PIC16C62XA/CR62XA-20 (Commercial, Industrial, Extended) PIC16LC62XA/LCR62XA-04 (Commercial, Industrial) PIC16LC62XA/LCR62XA-20 (Commercial, Industrial) Standard Operating Conditions (unless otherwise stated) Operating temperature –40 °C ≤ TA ≤ +85°C for industrial and 0 °C ≤ TA ≤ +70°C for commercial and –40 °C ≤ TA ≤ +125°C for extended Param No. Sym Characteristic Min Typ† Max Units Conditions D001 D001A VDD Supply Voltage 3.0 4.5 - - 5.5 5.5 V V XT, RC and LP osc configuration HS osc configuration D002 VDR RAM Data Retention Voltage (Note 1) – 1.5* – V Device in SLEEP mode D003 VPOR VDD start voltage to ensure Power-on Reset – VSS – V See section on power-on reset for details D004 SVDD VDD rise rate to ensure Power-on Reset 0.05* – – V/ms See section on power-on reset for details D005 VBOR Brown-out Detect Voltage 3.7 3.7 4.0 4.0 4.3 4.4 V BOREN configuration bit is cleared (Extended) D010 D010A D013 IDD Supply Current (Note 2) – – – 1.2 35 3.0 2.0 70 7.5 mA µA mA XT and RC osc configuration FOSC = 4 MHz, VDD = 5.5V, WDT disabled (Note 4) LP osc configuration, PIC16C62XA-04 only FOSC = 32 kHz, VDD = 4.0V, WDT disabled HS osc configuration FOSC = 20 MHz, VDD = 5.5V, WDT disabled D020 IPD Power Down Current (Note 3) – 1.0 2.5 15 µA µA VDD=4.0V, WDT disabled (125 °C) D023 ∆IWDT ∆IBOR ∆ICOMP ∆IVREF WDT Current (Note 5) Brown-out Reset Current (Note 5) Comparator Current for each Comparator (Note 5) VREF Current (Note 5) – – – – 6.0 75 60 90 10 12 150 75 200 µA µA µA µA µA VDD=4.0V (125 °C) BOR enabled, VDD = 5.0V VDD = 4.0V VDD = 4.0V * These parameters are characterized but not tested. † Data in "Typ" column is at 5.0V, 25 °C, unless otherwise stated. These parameters are for design guidance only and are not tested. Note 1: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data. 2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin loading and switching rate, oscillator type, internal code execution pattern, and temperature also have an impact on the current con- sumption. The test conditions for all IDD measurements in active operation mode are: OSC1 = external square wave, from rail to rail; all I/O pins tri-stated, pulled to VDD, MCLR = VDD; WDT enabled/disabled as specified. 3: The power down current in SLEEP mode does not depend on the oscillator type. Power down current is measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD or VSS. 4: For RC osc configuration, current through Rext is not included. The current through the resistor can be estimated by the formula Ir = VDD/2Rext (mA) with Rext in k Ω. 5: The ∆ current is the additional current consumed when this peripheral is enabled. This current should be added to the base IDD or IPD measurement. |
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