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L9779WD 数据表(PDF) 73 Page - STMicroelectronics |
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L9779WD 数据表(HTML) 73 Page - STMicroelectronics |
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73 / 170 page  DocID027452 Rev 5 73/170 L9779WD Functional description 169 6.12 External MOSFET gate pre-drivers 2x external N-MOS gate drivers are available. Figure 45. External MOSFET gate pre-drivers circuit The pre-drivers are designed with the following diagnostic features: Open load detection during off state Short circuit detection during on state Programmable drain threshold and filter time for short fault detection. By monitoring the drain voltage of the external MOS each pre-driver is able to detect an open load and short to GND in the off state and a shorted load to VB in the on state. All faults are reported through MSC communication. An open load fault is detected when the drain voltage is less than the Vopen threshold. A shorted load fault is reported when the drain voltage is greater than the programmed threshold voltage for a time longer than the tshort programmed time. The output is switched off and the fault bit is set. The filter time and threshold voltage are programmed through MSC. A suitable clamping device must be put external in order to protect the device. |
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