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L9779WD 数据表(PDF) 74 Page - STMicroelectronics |
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L9779WD 数据表(HTML) 74 Page - STMicroelectronics |
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74 / 170 page  Functional description L9779WD 74/170 DocID027452 Rev 5 Table 30. External MOSFET gate pre-drivers Pin Symbol Parameter Test condition Min Typ Max Uni t DRAIN8_9, OUT8_9 VON Output voltage high level - VDD5 -0.5V - VDD5 - Ileak_L Leakage current of push-pull low-side -- - 1 µA Ileak_H Leakage current of push-pull high-side -- - 1 µA Idrive Turn-on current - 22 - 12 mA Idrive Turn-off current - 12 - 22 mA Rgate External resistive pull-down Application note - 200 - kΩ VHVT Output voltage ok range threshold - VOutopen +120mV -3 - VOUTOPEN Output open load voltage Open load condition 2.3 - 2.7 V VLVT Output Short-circuit to Gnd threshold voltage -1.9 - VOutopen -200mV V IDRAIN_PD Output diagnostic pull down current off state Vpin = 5 V 50 - 110 µA IDRAIN_PU Output diagnostic pull up current off state Vpin = 1.5 V 110 160 210 µA Itopen Open load threshold current - 30 - 90 µA TFILTERdiago ff Filtering open load and short to gnd diag. off, Test by scan -37 50 63 µs Td_mask Diagnosis Mask Delay after switch-off, Test by scan - 300 - 500 µs Tdelay Output on-off delay time Cout = 10 nF From command to 10% of transition -- 2.2 µs Vshort Short to VB fault detection voltage threshold. Programmable from 0.15 V to 2.5 V - -20% 0.15(1) +20% V -20% 0.3 +20% -20% 0.45 +20% -15% 0.5 (defaul t) +15% -15% 1 +15% -15% 1.5 +15% -15% 2 +15% -15% 2.5 +15% |
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